Etching of silicon dioxide in off-electrode plasma using a chrome mask
V. V. Podlipnovab, V. A. Kolpakova, N. L. Kazanskiiab
a Samara National Research University, Samara, Russia
b Image Processing Systems Institute îf RAS, – Branch of the FSRC “Crystallography and Photonics” RAS, Samara, Russia
We discuss results of etching a Cr-SiO$_2$ structure is in a flow of off-electrode gas-discharge plasma in a CF$_4$ + O$_2$ gas at a ratio of 50: 1, at the discharge current I = 80 mA, accelerating voltage U = 1.2 kV, and process duration t = 5 min. It was shown that changes in the intensity of Raman spectral bands in the course of etching correspond to nanoscale changes in the thin Cr-SiO$_2$ films and a chrome mask. The peculiarity of the etching process consists in the removal of the Cr$_2$O$_3$ oxide with increasing amount of nitrogen molecules in the structure of the Cr film. It was found that spray products deposited inside the chrome mask windows at U = 1.2 kV and I = 80 mA are in the form of Cr$_2$N, according to their Raman spectra.
diffusion, ion-electron beam, etch, reprecipitation, micromasking.
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V. V. Podlipnov, V. A. Kolpakov, N. L. Kazanskii, “Etching of silicon dioxide in off-electrode plasma using a chrome mask”, Computer Optics, 40:6 (2016), 830–836
Citation in format AMSBIB
\by V.~V.~Podlipnov, V.~A.~Kolpakov, N.~L.~Kazanskii
\paper Etching of silicon dioxide in off-electrode plasma using a chrome mask
\jour Computer Optics
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