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Pis'ma v Zh. Èksper. Teoret. Fiz., 2006, Volume 83, Issue 11, Pages 596–599 (Mi jetpl1321)  

This article is cited in 11 scientific papers (total in 11 papers)

CONDENSED MATTER

Resonant Raman scattering in nanostructures with InGaAs/AlAs quantum dots

A. G. Milekhina, A. I. Toropova, A. K. Bakarova, Sh. Shul'tseb, D. R. T. Tsanb

a Institute of Semiconductor Physics of SB RAS
b Institut für Physik, Technische Universität Chemnitz

Abstract: Raman scattering by optical phonons in InxGa1 − x As/AlAs nanostructures with quantum dots has been studied experimentally for compositions corresponding to x = 0.3−1 under out-resonance conditions. Features due to scattering by GaAs-and InAs-like optical phonons in quantum dots have been detected, and the phonon frequencies have been determined as a function of the dot composition. With increasing excitation energy, a red shift is observed in the frequency of the GaAs-like phonon in quantum dots, which testifies to Raman scattering selective by the size of quantum dots. Under resonant conditions, multiphonon light scattering by optical and interface phonons is observed up to the third order, including overtones of the first-order phonons of InGaAs and AlAs materials and their combinations.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2006, 83:11, 505–508

Bibliographic databases:

PACS: 63.22.+m, 78.30.Fs, 78.67.Hc
Received: 24.04.2006

Citation: A. G. Milekhin, A. I. Toropov, A. K. Bakarov, Sh. Shul'tse, D. R. T. Tsan, “Resonant Raman scattering in nanostructures with InGaAs/AlAs quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:11 (2006), 596–599; JETP Letters, 83:11 (2006), 505–508

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    This publication is cited in the following articles:
    1. Zhong Q.H., Liu C.-H., Physica B-Condensed Matter, 403:10–11 (2008), 1870–1875  crossref  adsnasa  isi  elib  scopus
    2. Zhong Q.-H., Liu C.-H., Zhang Yu.-Q., Sun H.-Ch., Phys Lett A, 372:12 (2008), 2103–2108  crossref  zmath  adsnasa  isi  elib  scopus
    3. Zhong Q.-H., Liu C.-H., Solid-State Electronics, 53:2 (2009), 134–139  crossref  adsnasa  isi  elib  scopus
    4. Lu L., Xie W., Wei R., Superlattices and Microstructures, 49:5 (2011), 555–561  crossref  adsnasa  isi  scopus
    5. Zhong Q.-H., Sun Yu.-T., Thin Solid Films, 519:22 (2011), 8178–8181  crossref  adsnasa  isi  elib  scopus
    6. Lu L., Xie W., Liang Sh., Current Applied Physics, 11:6 (2011), 1302–1306  crossref  adsnasa  isi  elib  scopus
    7. Milekhin A., Yeryukov N., Toropov A., Dmitriev D., Sheremet E., Zahn D.R.T., Nanoscale Res. Lett., 7 (2012), 476, 1–5  crossref  isi  elib  scopus
    8. Milekhin A.G. Yeryukov N.A. Sveshnikova L.L. Duda T.A. Kosolobov S.S. Latyshev A.V. Surovtsev N.V. Adichtchev S.V. Himcinschi C. Zenkevich E.I. Jian W.-B. Zahn D.R.T., J. Phys. Chem. C, 116:32 (2012), 17164–17168  crossref  isi  elib  scopus
    9. Zhong Q.-H., Wu Yu., Xiao Yu.-Ch., Hu L.-B., Wang R.-Q., Mod. Phys. Lett. B, 28:21 (2014), 1450172  crossref  isi  elib  scopus
    10. Betancourt-Riera R., Betancourt-Riera R., Nieto Jalil J.M., Riera R., Chin. Phys. B, 24:11 (2015), 117302  crossref  isi  elib  scopus
    11. Milekhin A.G., Zahn D.R.T., Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, eds. Latyshev A., Dvurechenskii A., Aseev A., Elsevier Science BV, 2017, 157–186  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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