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Pis'ma v Zh. Èksper. Teoret. Fiz., 2010, Volume 92, Issue 6, Pages 429–437 (Mi jetpl1420)  

This article is cited in 8 scientific papers (total in 8 papers)

CONDENSED MATTER

Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

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English version:
Journal of Experimental and Theoretical Physics Letters, 2010, 92:6, 388–395

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Document Type: Article
Received: 04.08.2010

Citation: S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437; JETP Letters, 92:6 (2010), 388–395

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. A. A. Shklyaev, K. N. Romanyuk, A. V. Latyshev, A. V. Arzhannikov, “Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface”, JETP Letters, 94:6 (2011), 442–445  mathnet  crossref  isi
    2. K. N. Romanyuk, A. A. Shklyaev, B. Z. Olshanetsky, A. V. Latyshev, “Formation of Ge clusters at a Si(111)-Bi-$\sqrt{3}\times\sqrt{3}$ surface”, JETP Letters, 93:11 (2011), 661–666  mathnet  crossref  isi
    3. S. A. Teys, “Features of atomic processes at the formation of a wetting layer and nucleation of three-dimensional Ge islands on Si(111) and Si(100) surfaces”, JETP Letters, 96:12 (2012), 794–802  mathnet  crossref  isi  elib
    4. Loshkarev I.D., Trukhanov E.M., Romanyuk K.N., Kachanova M.M., “Teoreticheskoe i eksperimentalnoe opredelenie nachalnoi stadii plasticheskoi relaksatsii napryazhenii nesootvetstviya v geterosisteme podlozhka(111)–ostrovki plenki”, Izvestiya rossiiskoi akademii nauk. seriya fizicheskaya, 76:3 (2012), 425–425  elib
    5. Zhachuk R., Teys S., Coutinho J., “Strain-Induced Structure Transformations on Si(111) and Ge(111) Surfaces: a Combined Density-Functional and Scanning Tunneling Microscopy Study”, J. Chem. Phys., 138:22 (2013), 224702  crossref  adsnasa  isi  elib  scopus
    6. Grimm A., Fissel A., Bugiel E., Wietler T.F., “In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction”, Appl. Surf. Sci., 370 (2016), 40–48  crossref  isi  elib  scopus
    7. Teys S.A., “Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study”, Appl. Surf. Sci., 392 (2017), 1017–1025  crossref  isi  elib  scopus
    8. Teys S.A., “Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky-Krastanov Growth Mechanism”, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, ed. Latyshev A. Dvurechenskii A. Aseev A., Elsevier Science Bv, 2017, 279–295  crossref  isi  scopus
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