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Pis'ma v Zh. Èksper. Teoret. Fiz., 2005, Volume 82, Issue 5, Pages 326–330 (Mi jetpl1556)  

This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy

I. V. Sabininaa, A. K. Gutakovskiia, Yu. G. Sidorova, M. V. Yakusheva, V. S. Varavina, A. V. Latyshevba

a Institute of Semiconductor Physics of Siberian Branch RAS
b Novosibirsk State University

Abstract: It has been shown that phase contrast in atomic force microscopy (AFM) can be used to obtain adequate information on the density and distribution of antiphase domains on the surface of CdHgTe films grown by molecular beam epitaxy on a Si(301) substrate. By comparing the AFM phase images of the film surface with TEM images of structural defects in the near-surface region, the relation between microstructure and micromorphology of the films is revealed.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2005, 82:5, 292–296

Bibliographic databases:

PACS: 68.37.-d, 68.47.Fg, 68.55.-a
Received: 11.07.2005

Citation: I. V. Sabinina, A. K. Gutakovskii, Yu. G. Sidorov, M. V. Yakushev, V. S. Varavin, A. V. Latyshev, “Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005), 326–330; JETP Letters, 82:5 (2005), 292–296

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Yakushev M.V., Babenko A.A., Varavin V.S., Vasil'ev V.V., Mironova L.V., Pridachin D.N., Remesnik V.G., Sabinina I.V., Sidorov Yu.G., Suslyakov A.O., 19th International Conference on Photoelectronics and Night Vision Devices, Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), 6636, 2007, 63611–63611  isi
    2. Sabinina I.V., Gutakovskii A.K., Sidorov Yu.G., Varavin V.S., Latyshev A.V., Journal of Surface Investigation X ray Synchrotron and Neutron Techniques, 2:1 (2008), 120–126  isi
    3. Yakushev M.V., Brunev D.V., Varavin V.S., Vasilyev V.V., Dvoretskii S.A., Marchishin I.V., Predein A.V., Sabinina I.V., Sidorov Yu.G., Sorochkin A.V., Semiconductors, 45:3 (2011), 385–391  crossref  adsnasa  isi  elib  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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