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Pis'ma v Zh. Èksper. Teoret. Fiz.:

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Pis'ma v Zh. Èksper. Teoret. Fiz., 2005, Volume 81, Issue 1, Pages 33–36 (Mi jetpl1791)  

This article is cited in 15 scientific papers (total in 15 papers)


Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots

A. G. Milekhina, A. I. Nikiforova, O. P. Pchelyakova, A. G. Rodriguesb, J. C. Galzeranib, D. R. T. Zahnc

a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Departamento de Fisica, Universidade Federal de Sao Carlos, C.P. 676, Sao Carlos, SP, Brasil
c Institut für Physik, Technische Universität Chemnitz, D 09107 Chemniz, Germany

Abstract: The resonant Raman scattering in GeSi/Si structures with GeSi quantum dots has been analyzed. These structures were formed at various temperatures in the process of molecular-beam epitaxy. It has been shown that Raman scattering spectra recorded near resonances with the $E_0$ and $E_1$ electronic transitions exhibit the lines of Ge optical phonons whose frequencies differ significantly from the corresponding values in bulk germanium. In the structures grown at low temperatures ($300\div 400^\circ$C), the phonon frequency decreases with increasing excitation energy. This behavior is attributed to Raman scattering, which is sensitive to the size of quantum dots, and shows that quantum dots are inhomogeneous in size. In the structures grown at a higher temperature ($500^\circ$C), the opposite dependence of the frequency of Ge phonons on excitation energy is observed. This behavior is attributed to the competitive effect of internal mechanical stresses in quantum dots, the localization of optical photons, and the mixing of Ge and Si atoms in structures with a bimodal size distribution of quantum dots.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2005, 81:1, 30–33

Bibliographic databases:

PACS: 63.22.+m, 78.67.Hc, 78.30.Am
Received: 29.11.2004

Citation: A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, A. G. Rodrigues, J. C. Galzerani, D. R. T. Zahn, “Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:1 (2005), 33–36; JETP Letters, 81:1 (2005), 30–33

Citation in format AMSBIB
\by A.~G.~Milekhin, A.~I.~Nikiforov, O.~P.~Pchelyakov, A.~G.~Rodrigues, J.~C.~Galzerani, D.~R.~T.~Zahn
\paper Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2005
\vol 81
\issue 1
\pages 33--36
\jour JETP Letters
\yr 2005
\vol 81
\issue 1
\pages 30--33

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    This publication is cited in the following articles:
    1. Ladanov M.Y., Milekhin A.G., Toropov A.I., Bakarov A.K., Gutakovskii A.K., Tenne D.A., Schulze S., Zahn D.R.T., Zh Èksper Teoret Fiz, 101:3 (2005), 554–561  crossref  adsnasa  isi  scopus
    2. Baribeau J.M., Wu X., Rowell N.L., Lockwood D.J., Journal of Physics: Condensed Matter, 18:8 (2006), R139–R174  crossref  isi  scopus
    3. JETP Letters, 83:11 (2006), 505–508  mathnet  crossref  isi
    4. Zhong Q.H., Liu C.-H., Physica B-Condensed Matter, 403:10–11 (2008), 1870–1875  crossref  adsnasa  isi  elib  scopus
    5. Milekhin A., Toropov A., Zahn D.R.T., Physica Status Solidi C-Current Topics in Solid State Physics, 6:9 (2009), 2033–2038  crossref  adsnasa  isi  scopus
    6. Zhong Q.-H., Yi X.-H., Superlattices and Microstructures, 47:6 (2010), 723–731  crossref  adsnasa  isi  scopus
    7. Zhong Q.-H., Eur Phys J B, 74:4 (2010), 451–456  crossref  zmath  adsnasa  isi  scopus
    8. Tan Q.-R., Liu C.-H., Lu F., Physica B, 407:24 (2012), 4787–4792  crossref  adsnasa  isi  elib  scopus
    9. Milekhin A.G. Yeryukov N.A. Sveshnikova L.L. Duda T.A. Kosolobov S.S. Latyshev A.V. Surovtsev N.V. Adichtchev S.V. Himcinschi C. Zenkevich E.I. Jian W.-B. Zahn D.R.T., J. Phys. Chem. C, 116:32 (2012), 17164–17168  crossref  isi  elib  scopus
    10. Karimi M.J., Rezaei G., Pakarzadeh H., Phys. Lett. A, 377:34-36 (2013), 2164–2171  crossref  mathscinet  zmath  adsnasa  isi  elib  scopus
    11. Rezaei G., Karimi M.J., Pakarzadeh H., J. Lumines., 143 (2013), 551–557  crossref  isi  elib  scopus
    12. Vasin A.S., Vikhrova O.V., Vasilevskiy M.I., J. Appl. Phys., 115:14 (2014), 143505  crossref  isi  elib  scopus
    13. Hashemi G., Rezaei G., Superlattices Microstruct., 85 (2015), 161–172  crossref  isi  elib  scopus
    14. Milekhin A.G. Kuznetsov S.A. Sveshnikova L.L. Duda T.A. Milekhin I.A. Rodyakina E.E. Latyshev A.V. Dzhagan V.M. Zahn D.R.T., J. Phys. Chem. C, 121:10 (2017), 5779–5786  crossref  isi  scopus
    15. Milekhin A.G. Zahn D.R.T., Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, ed. Latyshev A. Dvurechenskii A. Aseev A., Elsevier Science BV, 2017, 157–186  crossref  isi  scopus
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