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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 93, Issue 1, Pages 13–17 (Mi jetpl1796)  

This article is cited in 11 scientific papers (total in 11 papers)

CONDENSED MATTER

Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate

A. A. Zhukova, Ch. Volkb, A. Windenbc, H. Hardtdegenbc, Th. Schäpersb

a Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
b Institute of Bio- and Nanosystems (IBN-1): Semiconductor Nanoelectronics, Juelich, Germany
c JARA-Fundamentals of Future Information Technology, Research Centre Jülich, 52425 Jülich Germany

Abstract: We investigate the conductance of the InAs nanowire in the presence of electrical potential created by AFM scanning gate. At helium temperature Coulomb blockade diamonds pattern give the same result for quantum dot sizes ratio as reveals scanning gate imaging. The essential influence of local electrical field direction on the tunneling rate through the weak junction in InAs wire is observed. To explain this behavior the redistribution of the electrons among conductive channels in the wire must be taken into account.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 93:1, 10–14

Bibliographic databases:

Document Type: Article
Received: 01.11.2010
Revised: 19.11.2010
Language: English

Citation: A. A. Zhukov, Ch. Volk, A. Winden, H. Hardtdegen, Th. Schäpers, “Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:1 (2011), 13–17; JETP Letters, 93:1 (2011), 10–14

Citation in format AMSBIB
\Bibitem{ZhuVolWin11}
\by A.~A.~Zhukov, Ch.~Volk, A.~Winden, H.~Hardtdegen, Th.~Sch\"apers
\paper Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 93
\issue 1
\pages 13--17
\mathnet{http://mi.mathnet.ru/jetpl1796}
\transl
\jour JETP Letters
\yr 2011
\vol 93
\issue 1
\pages 10--14
\crossref{https://doi.org/10.1134/S0021364011010103}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000288711700003}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-79953007779}


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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Wirths S., Weis K., Winden A., Sladek K., Volk C., Alagha S., Weirich T.E., von der Ahe M., Hardtdegen H., Lueth H., Demarina N., Gruetzmacher D., Schaepers T., “Effect of Si-doping on InAs nanowire transport and morphology”, Journal of Applied Physics, 110:5 (2011), 053709  crossref  adsnasa  isi  scopus
    2. Zhukov A.A., Volk Ch., Winden A., Hardtdegen H., Schaepers T., “New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires”, Physica E-Low-Dimensional Systems & Nanostructures, 44:3 (2011), 690–695  crossref  mathscinet  adsnasa  isi  scopus
    3. JETP Letters, 96:2 (2012), 109–112  mathnet  crossref  isi  elib  elib
    4. Zhukov A.A., Volk Ch., Winden A., Hardtdegen H., Schapers T., “Negative Differential Conductance in Inas Wire Based Double Quantum Dot Induced by a Charged Afm Tip”, J. Exp. Theor. Phys., 115:6 (2012), 1062–1067  crossref  adsnasa  isi  elib  scopus
    5. Zhukov A.A. Volk Ch. Winden A. Hardtdegen H. Schaepers T., “Distortions of the Coulomb Blockade Conductance Line in Scanning Gate Measurements of Inas Nanowire Based Quantum Dots”, J. Exp. Theor. Phys., 116:1 (2013), 138–144  crossref  adsnasa  isi  elib  scopus
    6. Bloemers C., Rieger T., Grap T., Raux M., Lepsa M.I., Lueth H., Gruetzmacher D., Schaepers T., “Gate-Induced Transition Between Metal-Type and Thermally Activated Transport in Self-Catalyzed Mbe-Grown Inas Nanowires”, Nanotechnology, 24:32 (2013), 325201  crossref  isi  scopus
    7. Webb J.L., Persson O., Dick K.A., Thelander C., Timm R., Mikkelsen A., “High Resolution Scanning Gate Microscopy Measurements on Inas/Gasb Nanowire Esaki Diode Devices”, Nano Res., 7:6 (2014), 877–887  crossref  adsnasa  isi  elib  scopus
    8. Zhukov A.A. Volk C. Winden A. Hardtdegen H. Schaepers T., “The Electronic Transport of TOP Subband and Disordered Sea in an Inas Nanowire in the Presence of a Mobile Gate”, J. Phys.-Condes. Matter, 26:16 (2014), 165304  crossref  isi  scopus
    9. Weis K., Wirths S., Winden A., Sladek K., Hardtdegen H., Lueth H., Gruetzmacher D., Schaepers T., “Quantum Dots in Inas Nanowires Induced by Surface Potential Fluctuations”, Nanotechnology, 25:13 (2014), 135203  crossref  adsnasa  isi  elib  scopus
    10. JETP Letters, 100:1 (2014), 32–38  mathnet  crossref  crossref  isi  elib  elib
    11. Sato M., Yin X., Kuroda R., Kasai S., “Detection of Discrete Surface Charge Dynamics in Gaas-Based Nanowire Through Metal-Tip-Induced Current Fluctuation”, Jpn. J. Appl. Phys., 55:2, 1 (2016), 02BD01  crossref  mathscinet  isi  scopus
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