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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 93, Issue 1, Pages 18–23 (Mi jetpl1797)  

This article is cited in 24 scientific papers (total in 24 papers)

CONDENSED MATTER

Ternary compounds based on binary topological insulators as an efficient way for modifying the Dirac cone

T. V. Menshchikovaa, S. V. Eremeevab, Yu. M. Koroteevb, V. M. Kuznetsova, E. V. Chulkovcd

a Tomsk State University
b Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
c Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, 20080 San Sebastián, Spain
d Donostia International Physics Center (DIPC)

Abstract: The electronic structure of A$^{\rm IV}$B$^{\rm VI}\cdot$A$^{\rm V}_2$B$^{\rm VI}_3$ ternary compounds consisting of seven-layer atomic blocks separated by van der Waals gaps has been theoretically investigated. The YbBi(Sb)$_2$Te$_4$ compounds have been considered, for which a similar atomic structure has been predicted. It has been shown that most compounds based on Group IV elements, as well as YbBi$_2$Te$_4$, are three-dimensional topological insulators. Calculations of the surface electronic structure of MBi$_2$Te$_4$, where M is a Group IV element or Yb, demonstrate the possibility of tuning the Dirac surface conduction state owing to the first element.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 93:1, 15–20

Bibliographic databases:

Document Type: Article
Received: 19.11.2010

Citation: T. V. Menshchikova, S. V. Eremeev, Yu. M. Koroteev, V. M. Kuznetsov, E. V. Chulkov, “Ternary compounds based on binary topological insulators as an efficient way for modifying the Dirac cone”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:1 (2011), 18–23; JETP Letters, 93:1 (2011), 15–20

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Eremeev S.V., Bihlmayer G., Vergniory M., Koroteev Yu.M., Menshchikova T.V., Henk J., Ernst A., Chulkov E.V., “Ab initio electronic structure of thallium-based topological insulators”, Physical Review B, 83:20 (2011), 205129  crossref  adsnasa  isi  elib
    2. T. V. Menshchikova, S. V. Eremeev, E. V. Chulkov, “On the origin of two-dimensional electron gas states at the surface of topological insulators”, JETP Letters, 94:2 (2011), 106–111  mathnet  crossref  isi
    3. I. V. Silkin, Yu. M. Koroteev, S. V. Eremeev, G. Bihlmayer, E. V. Chulkov, “Three- and two-dimensional topological insulators in Pb$_2$Sb$_2$Te$_5$, Pb$_2$Bi$_2$Te$_5$, and Pb$_2$Bi$_2$Se$_5$ layered compounds”, JETP Letters, 94:3 (2011), 217–221  mathnet  crossref  isi
    4. JETP Letters, 95:4 (2012), 213–218  mathnet  crossref  isi  elib  elib
    5. JETP Letters, 96:11 (2012), 714–718  mathnet  crossref  isi  elib  elib
    6. Okamoto K. Kuroda K. Miyahara H. Miyamoto K. Okuda T. Aliev Z.S. Babanly M.B. Amiraslanov I.R. Shimada K. Namatame H. Taniguchi M. Samorokov D.A. Menshchikova T.V. Chulkov E.V. Kimura A., “Observation of a Highly Spin-Polarized Topological Surface State in Gebi2Te4”, Phys. Rev. B, 86:19 (2012), 195304  crossref  adsnasa  isi  elib
    7. Yan B. Zhang Sh.-Ch., “Topological Materials”, Rep. Prog. Phys., 75:9 (2012), 096501  crossref  adsnasa  isi  elib
    8. Abdullaev N.A., Abdullaev N.M., Kerimova A.M., Kahramanov S.Sh., Bayramov A.I., Miyamoto H., Wakita K., Mamedov N.T., Nemov S.A., “Raman Scattering in the Bi-2(Te0.9Se0.1)(3) Solid Solution Films”, Semiconductors, 46:9 (2012), 1140–1144  crossref  adsnasa  isi  elib
    9. Kuroda K. Miyahara H. Ye M. Eremeev S.V. Koroteev Yu.M. Krasovskii E.E. Chulkov E.V. Hiramoto S. Moriyoshi C. Kuroiwa Y. Miyamoto K. Okuda T. Arita M. Shimada K. Namatame H. Taniguchi M. Ueda Y. Kimura A., “Experimental Verification of Pbbi2Te4 as a 3D Topological Insulator”, Phys. Rev. Lett., 108:20 (2012), 206803  crossref  adsnasa  isi  elib
    10. Souma S., Eto K., Nomura M., Nakayama K., Sato T., Takahashi T., Segawa K., Ando Y., “Topological Surface States in Lead-Based Ternary Telluride Pb(Bi1-Xsbx)(2)Te-4”, Phys. Rev. Lett., 108:11 (2012), 116801  crossref  adsnasa  isi  elib
    11. Vergniory M.G. Menshchikova T.V. Eremeev S.V. Chulkov E.V., “Bulk and Surface Electronic Structure of Snbi4Te7 Topological Insulator”, Appl. Surf. Sci., 267 (2013), 146–149  crossref  adsnasa  isi  elib
    12. Silkin I.V. Koroteev Yu.M. Bihlmayer G. Chulkov E.V., “Influence of the Ge-Sb Sublattice Atomic Composition on the Topological Electronic Properties of Ge2Sb2Te5”, Appl. Surf. Sci., 267 (2013), 169–172  crossref  adsnasa  isi  elib
    13. Okuda T. Kimura A., “Spin- and Angle-Resolved Photoemission of Strongly Spin-Orbit Coupled Systems”, J. Phys. Soc. Jpn., 82:2 (2013), 021002  crossref  adsnasa  isi
    14. Ando Y., “Topological Insulator Materials”, J. Phys. Soc. Jpn., 82:10 (2013), 102001  crossref  adsnasa  isi
    15. Kerimova A., Abdullayev N.A., Abdullayev N.M., Aliguliyeva Kh., Shim Y.G., Wakita K., Mamedov N., Bayramov A., Nemov S., “Raman Scattering and Electric Conductivity in Bi-2(Te0.9Se0.1)(3) Thin Films”, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 10, No 7-8, Physica Status Solidi C-Current Topics in Solid State Physics, 10, no. 7-8, eds. Cavalleri M., Herrmann L., Hopcke H., Juschak I., DaSilva C., Pfisterer A., Stass I., Hildebrandt S., Wiley-V C H Verlag Gmbh, 2013, 997–1000  crossref  isi
    16. Singh B., Lin H., Prasad R., Bansil A., “Topological Phase Transition and Two-Dimensional Topological Insulators in Ge-Based Thin Films”, Phys. Rev. B, 88:19 (2013), 195147  crossref  adsnasa  isi  elib
    17. Menshchikova T.V. Otrokov M.M. Tsirkin S.S. Samorokov D.A. Bebneva V.V. Ernst A. Kuznetsov V.M. Chulkov E.V., “Band Structure Engineering in Topological Insulator Based Heterostructures”, Nano Lett., 13:12 (2013), 6064–6069  crossref  adsnasa  isi  elib
    18. Shikin A.M. Klimovskikh I.I. Eremeev S.V. Rybkina A.A. Rusinova M.V. Rybkin A.G. Zhizhin E.V. Sanchez-Barriga J. Varykhalov A. Rusinov I.P. Chulkov E.V. Kokh K.A. Golyashov V.A. Kamyshlov V. Tereshchenko O.E., “Electronic and Spin Structure of the Topological Insulator Bi2Te2.4Se0.6”, Phys. Rev. B, 89:12 (2014), 125416  crossref  adsnasa  isi  elib
    19. Men'shov V.N. Tugushev V.V. Menshchikova T.V. Eremeev S.V. Echenique P.M. Chulkov E.V., “Modelling Near-Surface Bound Electron States in a 3D Topological Insulator: Analytical and Numerical Approaches”, J. Phys.-Condes. Matter, 26:48 (2014), 485003  crossref  isi
    20. Vergniory M.G., Menshchikova T.V., Silkin I.V., Koroteev Yu.M., Eremeev S.V., Chulkov E.V., “Electronic and Spin Structure of a Family of Sn-Based Ternary Topological Insulators”, Phys. Rev. B, 92:4 (2015), 045134  crossref  adsnasa  isi
    21. Lee H., Yazyev O.V., “Interplay Between Spin-Orbit Coupling and Crystal-Field Effect in Topological Insulators”, J. Phys.-Condes. Matter, 27:28 (2015), 285801  crossref  isi
    22. Mishra P., Lohani H., Kundu A.K., Patel R., Solanki G.K., Menon K.S.R., Sekhar B.R., “Electronic Structure of Germanium Selenide Investigated Using Ultra-Violet Photo-Electron Spectroscopy”, Semicond. Sci. Technol., 30:7 (2015), 075001  crossref  adsnasa  isi  elib
    23. Kim J.N., Kaviany M., Shim J.-H., “Optimized Zt of Bi2Te3-Gete Compounds From First Principles Guided By Homogeneous Data”, Phys. Rev. B, 93:7 (2016), 075119  crossref  adsnasa  isi
    24. Nemov S.A. Ulashkevich Yu.V., “Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals”, Semiconductors, 51:3 (2017), 318–321  crossref  isi
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