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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 93, Issue 1, Pages 18–23 (Mi jetpl1797)  

This article is cited in 27 scientific papers (total in 27 papers)


Ternary compounds based on binary topological insulators as an efficient way for modifying the Dirac cone

T. V. Menshchikovaa, S. V. Eremeevab, Yu. M. Koroteevb, V. M. Kuznetsova, E. V. Chulkovcd

a Tomsk State University
b Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
c Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, 20080 San Sebastián, Spain
d Donostia International Physics Center (DIPC)

Abstract: The electronic structure of A$^{\rm IV}$B$^{\rm VI}\cdot$A$^{\rm V}_2$B$^{\rm VI}_3$ ternary compounds consisting of seven-layer atomic blocks separated by van der Waals gaps has been theoretically investigated. The YbBi(Sb)$_2$Te$_4$ compounds have been considered, for which a similar atomic structure has been predicted. It has been shown that most compounds based on Group IV elements, as well as YbBi$_2$Te$_4$, are three-dimensional topological insulators. Calculations of the surface electronic structure of MBi$_2$Te$_4$, where M is a Group IV element or Yb, demonstrate the possibility of tuning the Dirac surface conduction state owing to the first element.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 93:1, 15–20

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Document Type: Article
Received: 19.11.2010

Citation: T. V. Menshchikova, S. V. Eremeev, Yu. M. Koroteev, V. M. Kuznetsov, E. V. Chulkov, “Ternary compounds based on binary topological insulators as an efficient way for modifying the Dirac cone”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:1 (2011), 18–23; JETP Letters, 93:1 (2011), 15–20

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    This publication is cited in the following articles:
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    2. T. V. Menshchikova, S. V. Eremeev, E. V. Chulkov, “On the origin of two-dimensional electron gas states at the surface of topological insulators”, JETP Letters, 94:2 (2011), 106–111  mathnet  crossref  isi
    3. I. V. Silkin, Yu. M. Koroteev, S. V. Eremeev, G. Bihlmayer, E. V. Chulkov, “Three- and two-dimensional topological insulators in Pb$_2$Sb$_2$Te$_5$, Pb$_2$Bi$_2$Te$_5$, and Pb$_2$Bi$_2$Se$_5$ layered compounds”, JETP Letters, 94:3 (2011), 217–221  mathnet  crossref  isi
    4. JETP Letters, 95:4 (2012), 213–218  mathnet  crossref  isi  elib  elib
    5. JETP Letters, 96:11 (2012), 714–718  mathnet  crossref  isi  elib  elib
    6. Okamoto K. Kuroda K. Miyahara H. Miyamoto K. Okuda T. Aliev Z.S. Babanly M.B. Amiraslanov I.R. Shimada K. Namatame H. Taniguchi M. Samorokov D.A. Menshchikova T.V. Chulkov E.V. Kimura A., “Observation of a Highly Spin-Polarized Topological Surface State in Gebi2Te4”, Phys. Rev. B, 86:19 (2012), 195304  crossref  adsnasa  isi  elib  scopus
    7. Yan B. Zhang Sh.-Ch., “Topological Materials”, Rep. Prog. Phys., 75:9 (2012), 096501  crossref  adsnasa  isi  elib  scopus
    8. Abdullaev N.A., Abdullaev N.M., Kerimova A.M., Kahramanov S.Sh., Bayramov A.I., Miyamoto H., Wakita K., Mamedov N.T., Nemov S.A., “Raman Scattering in the Bi-2(Te0.9Se0.1)(3) Solid Solution Films”, Semiconductors, 46:9 (2012), 1140–1144  crossref  adsnasa  isi  elib  scopus
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    10. Souma S., Eto K., Nomura M., Nakayama K., Sato T., Takahashi T., Segawa K., Ando Y., “Topological Surface States in Lead-Based Ternary Telluride Pb(Bi1-Xsbx)(2)Te-4”, Phys. Rev. Lett., 108:11 (2012), 116801  crossref  adsnasa  isi  elib  scopus
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    12. Silkin I.V. Koroteev Yu.M. Bihlmayer G. Chulkov E.V., “Influence of the Ge-Sb Sublattice Atomic Composition on the Topological Electronic Properties of Ge2Sb2Te5”, Appl. Surf. Sci., 267 (2013), 169–172  crossref  adsnasa  isi  elib  scopus
    13. Okuda T. Kimura A., “Spin- and Angle-Resolved Photoemission of Strongly Spin-Orbit Coupled Systems”, J. Phys. Soc. Jpn., 82:2 (2013), 021002  crossref  adsnasa  isi  scopus
    14. Ando Y., “Topological Insulator Materials”, J. Phys. Soc. Jpn., 82:10 (2013), 102001  crossref  adsnasa  isi  scopus
    15. Kerimova A., Abdullayev N.A., Abdullayev N.M., Aliguliyeva Kh., Shim Y.G., Wakita K., Mamedov N., Bayramov A., Nemov S., “Raman Scattering and Electric Conductivity in Bi-2(Te0.9Se0.1)(3) Thin Films”, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 10, No 7-8, Physica Status Solidi C-Current Topics in Solid State Physics, 10, no. 7-8, eds. Cavalleri M., Herrmann L., Hopcke H., Juschak I., DaSilva C., Pfisterer A., Stass I., Hildebrandt S., Wiley-V C H Verlag Gmbh, 2013, 997–1000  crossref  isi  scopus
    16. Singh B., Lin H., Prasad R., Bansil A., “Topological Phase Transition and Two-Dimensional Topological Insulators in Ge-Based Thin Films”, Phys. Rev. B, 88:19 (2013), 195147  crossref  adsnasa  isi  elib  scopus
    17. Menshchikova T.V. Otrokov M.M. Tsirkin S.S. Samorokov D.A. Bebneva V.V. Ernst A. Kuznetsov V.M. Chulkov E.V., “Band Structure Engineering in Topological Insulator Based Heterostructures”, Nano Lett., 13:12 (2013), 6064–6069  crossref  adsnasa  isi  elib  scopus
    18. Shikin A.M. Klimovskikh I.I. Eremeev S.V. Rybkina A.A. Rusinova M.V. Rybkin A.G. Zhizhin E.V. Sanchez-Barriga J. Varykhalov A. Rusinov I.P. Chulkov E.V. Kokh K.A. Golyashov V.A. Kamyshlov V. Tereshchenko O.E., “Electronic and Spin Structure of the Topological Insulator Bi2Te2.4Se0.6”, Phys. Rev. B, 89:12 (2014), 125416  crossref  adsnasa  isi  elib  scopus
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    21. Lee H., Yazyev O.V., “Interplay Between Spin-Orbit Coupling and Crystal-Field Effect in Topological Insulators”, J. Phys.-Condes. Matter, 27:28 (2015), 285801  crossref  isi  scopus
    22. Mishra P., Lohani H., Kundu A.K., Patel R., Solanki G.K., Menon K.S.R., Sekhar B.R., “Electronic Structure of Germanium Selenide Investigated Using Ultra-Violet Photo-Electron Spectroscopy”, Semicond. Sci. Technol., 30:7 (2015), 075001  crossref  adsnasa  isi  elib  scopus
    23. Kim J.N., Kaviany M., Shim J.-H., “Optimized Zt of Bi2Te3-Gete Compounds From First Principles Guided By Homogeneous Data”, Phys. Rev. B, 93:7 (2016), 075119  crossref  adsnasa  isi  scopus
    24. Nemov S.A. Ulashkevich Yu.V., “Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals”, Semiconductors, 51:3 (2017), 318–321  crossref  isi  scopus
    25. Babanly M.B. Chulkov E.V. Aliev Z.S. Shevelkov A.V. Amiraslanov I.R., “Phase Diagrams in Materials Science of Topological Insulators Based on Metal Chalcogenides”, Russ. J. Inorg. Chem., 62:13 (2017), 1703–1729  crossref  isi  scopus
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