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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 93, Issue 1, Pages 18–23 (Mi jetpl1797)  

This article is cited in 28 scientific papers (total in 28 papers)

CONDENSED MATTER

Ternary compounds based on binary topological insulators as an efficient way for modifying the Dirac cone

T. V. Menshchikovaa, S. V. Eremeevab, Yu. M. Koroteevb, V. M. Kuznetsova, E. V. Chulkovcd

a Tomsk State University
b Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
c Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, 20080 San Sebastián, Spain
d Donostia International Physics Center (DIPC)

Abstract: The electronic structure of A$^{\rm IV}$B$^{\rm VI}\cdot$A$^{\rm V}_2$B$^{\rm VI}_3$ ternary compounds consisting of seven-layer atomic blocks separated by van der Waals gaps has been theoretically investigated. The YbBi(Sb)$_2$Te$_4$ compounds have been considered, for which a similar atomic structure has been predicted. It has been shown that most compounds based on Group IV elements, as well as YbBi$_2$Te$_4$, are three-dimensional topological insulators. Calculations of the surface electronic structure of MBi$_2$Te$_4$, where M is a Group IV element or Yb, demonstrate the possibility of tuning the Dirac surface conduction state owing to the first element.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 93:1, 15–20

Bibliographic databases:

Received: 19.11.2010

Citation: T. V. Menshchikova, S. V. Eremeev, Yu. M. Koroteev, V. M. Kuznetsov, E. V. Chulkov, “Ternary compounds based on binary topological insulators as an efficient way for modifying the Dirac cone”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:1 (2011), 18–23; JETP Letters, 93:1 (2011), 15–20

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
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    2. T. V. Menshchikova, S. V. Eremeev, E. V. Chulkov, JETP Letters, 94:2 (2011), 106–111  mathnet  crossref  isi
    3. I. V. Silkin, Yu. M. Koroteev, S. V. Eremeev, G. Bihlmayer, E. V. Chulkov, JETP Letters, 94:3 (2011), 217–221  mathnet  crossref  isi
    4. JETP Letters, 95:4 (2012), 213–218  mathnet  crossref  isi  elib  elib
    5. JETP Letters, 96:11 (2012), 714–718  mathnet  crossref  isi  elib  elib
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    16. Singh B., Lin H., Prasad R., Bansil A., Phys. Rev. B, 88:19 (2013), 195147  crossref  adsnasa  isi  elib  scopus
    17. Menshchikova T.V. Otrokov M.M. Tsirkin S.S. Samorokov D.A. Bebneva V.V. Ernst A. Kuznetsov V.M. Chulkov E.V., Nano Lett., 13:12 (2013), 6064–6069  crossref  adsnasa  isi  elib  scopus
    18. Shikin A.M. Klimovskikh I.I. Eremeev S.V. Rybkina A.A. Rusinova M.V. Rybkin A.G. Zhizhin E.V. Sanchez-Barriga J. Varykhalov A. Rusinov I.P. Chulkov E.V. Kokh K.A. Golyashov V.A. Kamyshlov V. Tereshchenko O.E., Phys. Rev. B, 89:12 (2014), 125416  crossref  adsnasa  isi  elib  scopus
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    21. Lee H., Yazyev O.V., J. Phys.-Condes. Matter, 27:28 (2015), 285801  crossref  isi  scopus
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    25. Babanly M.B. Chulkov E.V. Aliev Z.S. Shevelkov A.V. Amiraslanov I.R., Russ. J. Inorg. Chem., 62:13 (2017), 1703–1729  crossref  isi  scopus
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  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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