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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 93, Issue 9, Pages 579–583 (Mi jetpl1894)  

This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Electronic structure of Ge(111)-(2$\times$1) surface in the presence of doping atoms. Ab initio analysis of STM data

S. V. Savinova, S. I. Oreshkinb, N. S. Maslovaa

a M. V. Lomonosov Moscow State University, Faculty of Physics
b P. K. Sternberg Astronomical Institute, M. V. Lomonosov Moscow State University

Abstract: We present the result of first principles modeling of the Ge(111)-($2{\times}1$) surface electronic structure in the presence of donor doping atom at certain position in the surface bi-layer of ($2{\times}1$) reconstruction. We briefly compare these results with the data of experimental low temperature STM investigations. Ab initio calculations demonstrate that doping atom strongly disturbs local electronic structure. The separate state, most probably split off conduction band, appears in the bandgap. Surface LDOS reveals spatial oscillations in vicinity of foreign atom. We also show that the spatial extent of non-negligible inter-atomic interaction between neighboring donor atoms is not less then 70 Å.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 93:9, 521–525

Bibliographic databases:

Document Type: Article
Received: 15.02.2011
Revised: 28.03.2011
Language: English

Citation: S. V. Savinov, S. I. Oreshkin, N. S. Maslova, “Electronic structure of Ge(111)-(2$\times$1) surface in the presence of doping atoms. Ab initio analysis of STM data”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:9 (2011), 579–583; JETP Letters, 93:9 (2011), 521–525

Citation in format AMSBIB
\Bibitem{SavOreMas11}
\by S.~V.~Savinov, S.~I.~Oreshkin, N.~S.~Maslova
\paper Electronic structure of Ge(111)-(2$\times$1) surface in the presence of
doping atoms. Ab initio analysis of STM data
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 93
\issue 9
\pages 579--583
\mathnet{http://mi.mathnet.ru/jetpl1894}
\transl
\jour JETP Letters
\yr 2011
\vol 93
\issue 9
\pages 521--525
\crossref{https://doi.org/10.1134/S0021364011090128}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000293238800008}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-79960054666}


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  • http://mi.mathnet.ru/eng/jetpl/v93/i9/p579

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. JETP Letters, 96:1 (2012), 31–34  mathnet  crossref  isi  elib  elib
    2. JETP Letters, 97:7 (2013), 393–399  mathnet  crossref  crossref  isi  elib  elib
    3. Savinov S.V. Oreshkina A.I. Oreshkin S.I. van Haesendonck C., “Tunneling Spectroscopy of a Phosphorus Impurity Atom on the Ge(111)-(2 X 1) Surface”, J. Exp. Theor. Phys., 120:6 (2015), 1064–1076  crossref  adsnasa  isi  elib
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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