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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 94, Issue 2, Pages 110–115 (Mi jetpl1960)  

This article is cited in 28 scientific papers (total in 28 papers)


On the origin of two-dimensional electron gas states at the surface of topological insulators

T. V. Menshchikovaa, S. V. Eremeevab, E. V. Chulkovcd

a Tomsk State University
b Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
c CFM, Centro Mixto CSIC-UPV/EHU, Departamento de Fisica de Materiales, UPV/EHU, Apdo. 1072, 20080 San Sebasti'an, Spain
d Donostia International Physics Center (DIPC)

Abstract: The ab initio calculations of the electronic structure in the bulk and at the (0001) surface of narrow-band Bi$_2$Se$_3$, Sb$_2$Te$_3$, Sb$_2$STe$_2$, and Sb$_2$SeTe$_2$ semiconductors have been performed. It has been shown that ternary compounds Sb$_2$STe$_2$ and Sb$_2$SeTe$_2$, as well as the previously known compounds Bi$_2$Se$_3$ and Sb$_2$Te$_3$, are three-dimensional topological insulators. The influence of the subsurface van der Waals gap expansion on the surface electronic structure of these compounds has been analyzed. It has been shown that this expansion leads to the formation of new (trivial) surface states, namely a parabolic state in the conduction band and an M-shaped state in the valence band. These results explain the phenomena discovered recently in photoemission experiments and reveal the nature of new states that are caused by the adsorption of atoms on the surfaces of the layered topological insulators.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 94:2, 106–111

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Document Type: Article
Received: 18.05.2011

Citation: T. V. Menshchikova, S. V. Eremeev, E. V. Chulkov, “On the origin of two-dimensional electron gas states at the surface of topological insulators”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011), 110–115; JETP Letters, 94:2 (2011), 106–111

Citation in format AMSBIB
\by T.~V.~Menshchikova, S.~V.~Eremeev, E.~V.~Chulkov
\paper On the origin of two-dimensional electron gas states at the surface of topological insulators
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 94
\issue 2
\pages 110--115
\jour JETP Letters
\yr 2011
\vol 94
\issue 2
\pages 106--111

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    2. JETP Letters, 95:4 (2012), 213–218  mathnet  crossref  isi  elib  elib
    3. I. A. Nechaev, E. V. Chulkov, “Effects of the electron-electron interaction on the surface of three-dimensional topological insulators”, JETP Letters, 96:7 (2012), 480–485  mathnet  crossref  isi  elib  elib
    4. JETP Letters, 96:12 (2012), 780–784  mathnet  crossref  isi  elib
    5. Bianchi M. Hatch R.C. Guan D. Planke T. Mi J. Iversen B.B. Hofmann Ph., “The Electronic Structure of Clean and Adsorbate-Covered Bi2Se3: an Angle-Resolved Photoemission Study”, Semicond. Sci. Technol., 27:12 (2012), 124001  crossref  adsnasa  isi  elib  scopus
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    11. dos Reis D.D., Barreto L., Bianchi M., Silva Ribeiro G.A., Soares E.A., Simoes e Silva W., de Carvalho V.E., Rawle J., Hoesch M., Nicklin Ch., Fernandes W.P., Mi J., Iversen B.B., Hofmann Ph., “Surface Structure of Bi2Se3(111) Determined by Low-Energy Electron Diffraction and Surface X-Ray Diffraction”, Phys. Rev. B, 88:4 (2013), 041404  crossref  adsnasa  isi  scopus
    12. Rusinov I.P. Nechaev I.A. Chulkov E.V., “Theoretical Study of Influencing Factors on the Dispersion of Bulk Band-Gap Edges and the Surface States in Topological Insulators Bi2Te3 and Bi2Se3”, J. Exp. Theor. Phys., 116:6 (2013), 1006–1017  crossref  adsnasa  isi  elib  scopus
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    14. Park K., De Beule Ch., Partoens B., “The Ageing Effect in Topological Insulators: Evolution of the Surface Electronic Structure of Bi2Se3 Upon K Adsorption”, New J. Phys., 15 (2013), 113031  crossref  isi  scopus
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    18. Reimann J., Guedde J., Kuroda K., Chulkov E.V., Hoefer U., “Spectroscopy and Dynamics of Unoccupied Electronic States of the Topological Insulators Sb2Te3 and Sb2Te2S”, Phys. Rev. B, 90:8 (2014), 081106  crossref  adsnasa  isi  elib  scopus
    19. Foerster T., Krueger P., Rohlfing M., “Ab Initio Studies of Adatom- and Vacancy-Induced Band Bending in Bi2Se3”, Phys. Rev. B, 91:3 (2015), 035313  crossref  adsnasa  isi  scopus
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    21. Nechaev I.A. Aguilera I. De Renzi V. di Bona A. Rizzini A.L. Mio A.M. Nicotra G. Politano A. Scalese S. Aliev Z.S. Babanly M.B. Friedrich C. Bluegel S. Chulkov E.V., “Quasiparticle Spectrum and Plasmonic Excitations in the Topological Insulator Sb2Te3”, Phys. Rev. B, 91:24 (2015), 245123  crossref  mathscinet  adsnasa  isi  elib  scopus
    22. Bansil A. Lin H. Das T., “Colloquium : Topological band theory”, Rev. Mod. Phys., 88:2 (2016), 021004  crossref  mathscinet  isi  elib  scopus
    23. Vilaplana R., Sans J.A., Manjon F.J., Andrada-Chacon A., Sanchez-Benitez J., Popescu C., Gomis O., Pereira A.L.J., Garcia-Domene B., Rodriguez-Hernandez P., Munoz A., Daisenberger D., Oeckler O., “Structural and electrical study of the topological insulator SnBi2Te4 at high pressure”, J. Alloy. Compd., 685 (2016), 962–970  crossref  isi  scopus
    24. Huang Sh.-M., Huang Ch.-Ya., Huang Sh.-J., Hsu Ch., Yu Sh.-H., Chou M., Wadekar P.V., Chen Q.Yu.-S., Tu L.-W., “Observation of surface oxidation resistant Shubnikov-de Haas oscillations in Sb _{2} SeTe _{2} topological insulator”, J. Appl. Phys., 121:5 (2017), 054311  crossref  isi  elib  scopus
    25. Kung H.-H., Salehi M., Boulares I., Kemper A.F., Koirala N., Brahlek M., Lostak P., Uher C., Merlin R., Wang X., Cheong S.-W., Oh S., Blumberg G., “Surface Vibrational Modes of the Topological Insulator Bi2Se3 Observed By Raman Spectroscopy”, Phys. Rev. B, 95:24 (2017), 245406  crossref  isi  scopus
    26. Alexander-Webber J.A., Huang J., Beilsten-Edmands J., Cermak P., Drasar C., Nicholas R.J., Coldea A.I., “Multi-Band Magnetotransport in Exfoliated Thin Films of Cuxbi2Se3”, J. Phys.-Condes. Matter, 30:15 (2018), 155302  crossref  isi  scopus
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