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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 94, Issue 2, Pages 120–124 (Mi jetpl1962)  

This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Suppression of the virtual anderson transition in the impurity band of doped quantum well structures

N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin

Ioffe Physico-Technical Institute, Russian Academy of Sciences

Abstract: We have previously observed activation-type conductivity with low activation energies of heavily doped $p$-GaAs/AlGaAs quantum well structures at low temperatures. It has been attributed to the delocalization of the electron states near the maximum of a narrow impurity band in the sense of the Anderson transition. The possibility of this delocalization at a relatively low impurity concentration is associated with the narrowness of the impurity band in the presence of weak disorder. In this case, charge carriers were activated from the tail of the band and their presence was due to the background (weak) compensation. In this work, we study the dependence of the above virtual Anderson transition on the external compensation and impurity concentration. It has been found that an increase in the compensation does not initially affect the Anderson transition; however, at a higher compensation, it leads to the suppression of the transition owing to the growing disorder. An increase in the impurity concentration also initially leads to the suppression of the Anderson transition due to the disorder associated with the partial overlap of the Hubbard bands. However, the conductivity becomes metallic at a fairly high concentration due to the Mott transition.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 94:2, 116–120

Bibliographic databases:

Received: 23.03.2011

Citation: N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin, “Suppression of the virtual anderson transition in the impurity band of doped quantum well structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011), 120–124; JETP Letters, 94:2 (2011), 116–120

Citation in format AMSBIB
\Bibitem{AgrKozPol11}
\by N.~V.~Agrinskaya, V.~I.~Kozub, D.~S.~Poloskin
\paper Suppression of the virtual anderson transition in the impurity band of doped quantum well structures
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 94
\issue 2
\pages 120--124
\mathnet{http://mi.mathnet.ru/jetpl1962}
\transl
\jour JETP Letters
\yr 2011
\vol 94
\issue 2
\pages 116--120
\crossref{https://doi.org/10.1134/S0021364011140025}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000294960800006}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-80052906119}


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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. N. V. Agrinskaya, V. I. Kozub, JETP Letters, 98:5 (2013), 304–311  mathnet  crossref  crossref  isi  elib  elib
    2. Wang X., Wang B., Chen X., Chen Yu., Hou L., Xie W., Pan M., Infrared Phys. Technol., 79 (2016), 165–170  crossref  isi  elib  scopus
    3. JETP Letters, 105:8 (2017), 484–487  mathnet  crossref  crossref  isi  elib
    4. Agrinskaya N.V. Kozub V.I. Mikhailin N.Yu. Shamshur D.V., Solid State Commun., 260 (2017), 6–9  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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