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Pis'ma v Zh. Èksper. Teoret. Fiz., 2011, Volume 94, Issue 3, Pages 234–239 (Mi jetpl1981)  

This article is cited in 14 scientific papers (total in 14 papers)

CONDENSED MATTER

Three- and two-dimensional topological insulators in Pb$_2$Sb$_2$Te$_5$, Pb$_2$Bi$_2$Te$_5$, and Pb$_2$Bi$_2$Se$_5$ layered compounds

I. V. Silkina, Yu. M. Koroteevab, S. V. Eremeevb, G. Bihlmayercd, E. V. Chulkove

a Tomsk State University
b Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
c Institut f"{u}r Festk"{o}rperforschung and Institute for Advanced Simulation, Forschungszentrum J"{u}lich
d Institute of Solid State Research, Jülich
e Donostia International Physics Center

Abstract: The electronic structure of ternary compounds Pb$_2$Sb$_2$Te$_5$,, Pb$_2$Bi$_2$Te$_5$ and Pb$_2$Bi$_2$Se$_5$, which have a layered structure that consists of nine-layer atomic blocks separated by van der Waals gaps, has been theoretically studied. It has been shown that all studied compounds are three-dimensional topological insulators. The possibility of the existence of a two-dimensional topological insulator has been found in ultrathin (0001) Pb$_2$Sb$_2$Te$_5$ and Pb$_2$Bi$_2$Te$_5$ films. Oscillations of the $\mathbb{Z}_2$ topological invariant with an increase in the film thickness have been observed in the latter compound.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2011, 94:3, 217–221

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Document Type: Article
Received: 20.06.2011

Citation: I. V. Silkin, Yu. M. Koroteev, S. V. Eremeev, G. Bihlmayer, E. V. Chulkov, “Three- and two-dimensional topological insulators in Pb$_2$Sb$_2$Te$_5$, Pb$_2$Bi$_2$Te$_5$, and Pb$_2$Bi$_2$Se$_5$ layered compounds”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:3 (2011), 234–239; JETP Letters, 94:3 (2011), 217–221

Citation in format AMSBIB
\Bibitem{SilKorEre11}
\by I.~V.~Silkin, Yu.~M.~Koroteev, S.~V.~Eremeev, G.~Bihlmayer, E.~V.~Chulkov
\paper Three- and two-dimensional topological insulators in Pb$_2$Sb$_2$Te$_5$, Pb$_2$Bi$_2$Te$_5$, and Pb$_2$Bi$_2$Se$_5$ layered compounds
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 94
\issue 3
\pages 234--239
\mathnet{http://mi.mathnet.ru/jetpl1981}
\transl
\jour JETP Letters
\yr 2011
\vol 94
\issue 3
\pages 217--221
\crossref{https://doi.org/10.1134/S0021364011150112}
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    This publication is cited in the following articles:
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    3. Eremeev S.V. Vergniory M.G. Menshchikova T.V. Shaposhnikov A.A. Chulkov E.V., “The Effect of Van der Waal's Gap Expansions on the Surface Electronic Structure of Layered Topological Insulators”, New J. Phys., 14 (2012), 113030  crossref  isi  elib  scopus
    4. Silkin I.V. Koroteev Yu.M. Bihlmayer G. Chulkov E.V., “Influence of the Ge-Sb Sublattice Atomic Composition on the Topological Electronic Properties of Ge2Sb2Te5”, Appl. Surf. Sci., 267 (2013), 169–172  crossref  adsnasa  isi  elib  scopus
    5. Singh B. Lin H. Prasad R. Bansil A., “Topological Phase Transition and Two-Dimensional Topological Insulators in Ge-Based Thin Films”, Phys. Rev. B, 88:19 (2013), 195147  crossref  adsnasa  isi  elib  scopus
    6. Hromadko L., Prikryl J., Frumar M., Strizik L., Kost'al P., Benes L., Wagner T., “Physico-Chemical Properties of the Thin Films of the Sbxse100-X System (X=90, 85, 80)”, Thin Solid Films, 569 (2014), 17–21  crossref  adsnasa  isi  elib  scopus
    7. Li R. Xie Q. Cheng X. Li D. Li Y. Chen X.-Q., “First-Principles Study of the Large-Gap Three-Dimensional Topological Insulators M3Bi2 (M = Ca, Sr, Ba)”, Phys. Rev. B, 92:20 (2015), 205130  crossref  adsnasa  isi  elib  scopus
    8. Eremeev S.V., Men'shov V.N., Tugushev V.V., Chulkov E.V., “Interface Induced States At the Boundary Between a 3D Topological Insulator Bi2Se3 and a Ferromagnetic Insulator Eus”, J. Magn. Magn. Mater., 383 (2015), 30–33  crossref  adsnasa  isi  elib  scopus
    9. Chatterjee A., Biswas K., “Solution-Based Synthesis of Layered Intergrowth Compounds of the Homologous Pbmbi2Nte3N+M Series as Nanosheets”, Angew. Chem.-Int. Edit., 54:19 (2015), 5623–5627  crossref  isi  elib  scopus
    10. Kim S.H., Jin K.-H., Park J., Kim J.S., Jhi S.-H., Yeom H.W., “Topological phase transition and quantum spin Hall edge states of antimony few layers”, Sci Rep, 6 (2016), 33193  crossref  isi  scopus
    11. Filyanina M.V. Klimovskikh I.I. Eremeev S.V. Rybkina A.A. Rybkin A.G. Zhizhin E.V. Petukhov A.E. Rusinov I.P. Kokh K.A. Chulkov E.V. Tereshchenko O.E. Shikin A.M., “Specific features of the electronic, spin, and atomic structures of a topological insulator Bi2Te2.4Se0.6”, Phys. Solid State, 58:4 (2016), 779–787  crossref  isi  elib  scopus
    12. E. K. Petrov, I. V. Silkin, Yu. M. Koroteev, E. V. Chulkov, “Effect of deformation on the electronic structure and topological properties of the $\mathrm{A^{II}Mg_2Bi_2 \: (A^{II}= Mg, Ca, Sr, Ba)}$ compounds”, JETP Letters, 105:8 (2017), 502–507  mathnet  crossref  crossref  isi  elib
    13. Menshchikova T.V. Silkina O.Yu. Silkin I.V. Kuznetsov V.M. Chulkov E.V., “Regularities of the Quantum Spin Hall Phase Formation in Three-Dimensional Tetradymite-Like Topological Insulator Thin Films”, Phys. Rev. B, 96:16 (2017), 165441  crossref  isi  scopus
    14. Men'shov V.N. Shvets I.A. Tugushev V.V. Chulkov E.V., “Intrinsic Spin Hall Conductivity in Three-Dimensional Topological Insulator/Normal Insulator Heterostructures”, Phys. Rev. B, 96:7 (2017), 075302  crossref  mathscinet  isi  scopus
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