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Pis'ma v Zh. Èksper. Teoret. Fiz., 2004, Volume 79, Issue 1, Pages 25–29 (Mi jetpl2199)  

This article is cited in 3 scientific papers (total in 3 papers)

ATOMS, SPECTRA, RADIATIONS

Ionization mechanisms of aluminum acceptor impurity in silicon

T. N. Mamedova, D. G. Andrianovb, D. Herlachc, V. N. Gorelkind, A. V. Stoikova, U. Zimmermannc

a Joint Institute for Nuclear Research, Dubna, Moskovskaya obl.
b JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry
c Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
d Moscow Institute of Physics and Technology

Abstract: Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×1013, 2.7×1013, and 2.3×1015cm−3) and boron (1.3×1015cm−3) impurities, μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ≲1015cm−3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ∼105 to ∼106s−1 in the temperature range 45–55 K.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2004, 79:1, 21–24

Bibliographic databases:

Document Type: Article
PACS: 71.55.Cn, 76.75.+i
Received: 12.11.2003

Citation: T. N. Mamedov, D. G. Andrianov, D. Herlach, V. N. Gorelkin, A. V. Stoikov, U. Zimmermann, “Ionization mechanisms of aluminum acceptor impurity in silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:1 (2004), 25–29; JETP Letters, 79:1 (2004), 21–24

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    This publication is cited in the following articles:
    1. JETP Letters, 80:5 (2004), 339–342  mathnet  crossref  adsnasa
    2. Mamedov T.N., Andreika D., Baturin A.S., Herlach D., Gorelkin V.N., Gritsaj K.I., Ralchenko V.G., Stoykov A.V., Zhukov V.A., Zimmermann U., “Behavior of shallow acceptor impurities in uniaxially stressed silicon and in synthetic diamond studied by mu-SR”, Physica B-Condensed Matter, 374 (2006), 390–394  crossref  adsnasa  isi  scopus
    3. Stoykov A., Herlach D., Scheuermann R., Zimmermann U., Gritsay K., Mamedov T., “Negative muon spin rotation study of acceptor centers in SiC”, Physica B-Condensed Matter, 404:5–7 (2009), 824–826  crossref  adsnasa  isi  elib  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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