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Pis'ma v Zh. Èksper. Teoret. Fiz., 2012, Volume 95, Issue 4, Pages 230–235 (Mi jetpl2447)  

This article is cited in 19 scientific papers (total in 19 papers)


Ab initio study of 2DEG at the surface of topological insulator Bi$_2$Te$_3$

M. G. Vergniorya, T. V. Men'shikovab, S. V. Eremeevbc, E. V. Chulkovad

a Donostia International Physics Center
b Tomsk State University
c Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
d Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country

Abstract: By means of ab initio DFT-calculation we analyze the mechanism that drives the formation and evolution of the 2D electron gas (2DEG) states at the surface of Bi$_2$Te$_3$ topological insulator (TI). As it has been proved earlier it is due to an expansion of the van der Waals (vdW) spacing produced by intercalation of adsorbates. We will show that the effect of this expansion, in this particular surface, leads to several intriguing phenomena. On one hand we observe a different dispersion of the Dirac cone with respect to the ideal surface and the formation of Parabolic Bands (PB) below the conduction band and $M$-shaped bands in the valence band, the latters have been observed recently in photoemission experiments. On the other hand the expansion of the vdW-gaps changes the symmetry of the orbitals forming the Dirac cone and therefore producing modifications in the local spin texture. The localization of these new 2DEG-states and the relocalization of the Dirac cone will be studied as well.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2012, 95:4, 213–218

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Document Type: Article
Received: 26.01.2012
Language: English

Citation: M. G. Vergniory, T. V. Men'shikova, S. V. Eremeev, E. V. Chulkov, “Ab initio study of 2DEG at the surface of topological insulator Bi$_2$Te$_3$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:4 (2012), 230–235; JETP Letters, 95:4 (2012), 213–218

Citation in format AMSBIB
\by M.~G.~Vergniory, T.~V.~Men'shikova, S.~V.~Eremeev, E.~V.~Chulkov
\paper Ab initio study of 2DEG at the surface of topological insulator Bi$_2$Te$_3$
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2012
\vol 95
\issue 4
\pages 230--235
\jour JETP Letters
\yr 2012
\vol 95
\issue 4
\pages 213--218

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    This publication is cited in the following articles:
    1. I. A. Nechaev, E. V. Chulkov, “Effects of the electron-electron interaction on the surface of three-dimensional topological insulators”, JETP Letters, 96:7 (2012), 480–485  mathnet  crossref  isi  elib  elib
    2. JETP Letters, 96:12 (2012), 780–784  mathnet  crossref  isi  elib
    3. Bahramy M.S. King P.D.C. de la Torre A. Chang J. Shi M. Patthey L. Balakrishnan G. Hofmann Ph. Arita R. Nagaosa N. Baumberger F., “Emergent Quantum Confinement at Topological Insulator Surfaces”, Nat. Commun., 3 (2012), 1159  crossref  adsnasa  isi  elib  scopus
    4. Eremeev S.V. Vergniory M.G. Menshchikova T.V. Shaposhnikov A.A. Chulkov E.V., “The Effect of Van der Waal's Gap Expansions on the Surface Electronic Structure of Layered Topological Insulators”, New J. Phys., 14 (2012), 113030  crossref  isi  elib  scopus
    5. dos Reis D.D. Barreto L. Bianchi M. Silva Ribeiro G.A. Soares E.A. Simoes e Silva W. de Carvalho V.E. Rawle J. Hoesch M. Nicklin Ch. Fernandes W.P. Mi J. Iversen B.B. Hofmann Ph., “Surface Structure of Bi2Se3(111) Determined by Low-Energy Electron Diffraction and Surface X-Ray Diffraction”, Phys. Rev. B, 88:4 (2013), 041404  crossref  adsnasa  isi  scopus
    6. Crepaldi A., Cilento F., Ressel B., Cacho C., Johannsen J.C., Zacchigna M., Berger H., Bugnon Ph., Grazioli C., Turcu I.C.E., Springate E., Kern K., Grioni M., Parmigiani F., “Evidence of Reduced Surface Electron-Phonon Scattering in the Conduction Band of Bi2Se3 by Nonequilibrium Arpes”, Phys. Rev. B, 88:12 (2013), 121404  crossref  adsnasa  isi  elib  scopus
    7. V. V. Brazhkin, A. I. Orlov, “High-pressure thermoelectric characteristics of Bi$_2$Te$_3$ semiconductor with different charge carrier densities”, JETP Letters, 99:5 (2014), 283–285  mathnet  crossref  crossref  isi  elib  elib
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    9. Otrokov M.M. Chulkov E.V. Arnau A., “Breaking Time-Reversal Symmetry At the Topological Insulator Surface By Metal-Organic Coordination Networks”, Phys. Rev. B, 92:16 (2015), 165309  crossref  adsnasa  isi  elib  scopus
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    12. Choi H., Lee H., Park J., Yu H.-Y., Kim T.G., Shin C., “Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device”, Appl. Phys. Lett., 109:20 (2016), 203505  crossref  isi  scopus
    13. Kim H.J., Katsiotis M.S., Alhassan S., Zafiropoulou I., Pissas M., Sanakis Ya., Mitrikas G., Panopoulos N., Boukos N., Tzitzios V., Fardis M., Kim J.-G., Lee S.-G., Kim Y.-M., Yoo S.J., Lee J.-H., Kouloumpis A., Gournis D., Karakassides M., Papavassiliou G., “Unexpected orbital magnetism in Bi-rich Bi2Se3 nanoplatelets”, NPG Asia Mater., 8 (2016), e271  crossref  isi  scopus
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    17. Zhou W., Zhu H., Yarmoff J.A., “Spatial Distribution of Topological Surface State Electrons in Bi2Te3 Probed By Low-Energy na+ Ion Scattering”, Phys. Rev. B, 97:3 (2018), 035413  crossref  isi  scopus
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