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Pis'ma v Zh. Èksper. Teoret. Fiz., 2002, Volume 76, Issue 6, Pages 425–429 (Mi jetpl2929)  

This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The photoluminescence spectra of structures with self-assembled GeSi/Si(001) islands are investigated as functions of the growth temperature. It is shown that the shift of the peak of photoluminescence from islands toward lower energies on decreasing the growth temperature is due to the suppression of Si diffusion into islands and an increase in the fraction of Ge in islands. A photoluminescence signal from the GeSi islands is found in the region of energies down to 0.6  eV, which is considerably smaller than the band-gap width in bulk Ge. The position of the peak of photoluminescence from islands is described well by the model of a real-space indirect optical transition with account of the real composition and elastic strains of the islands. Mono-and multilayer structures are obtained with self-assembled GeSi/Si(001) nanoislands exhibiting a photoluminescence signal in the region $1.3\div2\mu m$ at room temperature.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2002, 76:6, 365–369

Document Type: Article
PACS: 78.55.Ap, 78.67.Hc, 81.05.Cy, 81.15.Hy
Received: 29.07.2002

Citation: N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, “Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 425–429; JETP Letters, 76:6 (2002), 365–369

Citation in format AMSBIB
\Bibitem{VosDroKra02}
\by N.~V.~Vostokov, Yu.~N.~Drozdov, Z.~F.~Krasil'nik, D.~N.~Lobanov, A.~V.~Novikov, A.~N.~Yablonskii
\paper Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2002
\vol 76
\issue 6
\pages 425--429
\mathnet{http://mi.mathnet.ru/jetpl2929}
\transl
\jour JETP Letters
\yr 2002
\vol 76
\issue 6
\pages 365--369
\crossref{https://doi.org/10.1134/1.1525038}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0013057103}


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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. A. A. Shklyaev, M. Ichikawa, “Extremely dense arrays of germanium and silicon nanostructures”, Phys. Usp., 51:2 (2008), 133–161  mathnet  crossref  crossref  adsnasa  isi
    2. Yakimov A.I., Kirienko V.V., Armbrister V.A., Dvurechenskii A.V., “Hydrogen Passivation of Self-Assembled Ge/Si Quantum Dots”, Semicond. Sci. Technol., 29:8 (2014), 085011  crossref  isi  elib  scopus
    3. Yablonskiy A.N., Baidakova N.A., Novikov A.V., Lobanov D.N., Shaleev M.V., “Excitation Spectra of Photoluminescence and Its Kinetics in Structures With Self-Assembled Ge:Si Nanoislands”, Semiconductors, 49:11 (2015), 1410–1414  crossref  isi  elib  scopus
    4. Rutckaia V., Heyrot F., Novikov A., Shaleev M., Petrov M., Schilling J., “Quantum Dot Emission Driven By Mie Resonances in Silicon Nanostructures”, Nano Lett., 17:11 (2017), 6886–6892  crossref  isi  scopus
    5. Stepikhova M.V., Novikov A.V., Yablonskiy A.N., Shaleev M.V., Utkin D.E., Rutckaia V.V., Skorokhodov E.V., Sergeev S.M., Yurasov D.V., Krasilnik Z.F., “Light Emission From Ge(Si)/Soi Self-Assembled Nanoislands Embedded in Photonic Crystal Slabs of Various Periods With and Without Cavities”, Semicond. Sci. Technol., 34:2 (2019), 024003  crossref  isi
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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