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Pis'ma v Zh. Èksper. Teoret. Fiz., 2012, Volume 96, Issue 1, Pages 77–86 (Mi jetpl3174)  

SCIENTIFIC SUMMARIES

Electronic structure of double Ge quantum dots in Si

A. I. Yakimov

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk

Abstract: Theoretical investigations of the electronic structure of elastically stressed double Ge quantum dots in Si performed in the six-band kp approximation with the Bir-Pikus Hamiltonian and with the configuration interaction method are reviewed. The existence of the antibonding ground state of holes has been revealed. It has been found that, when quantum dots approach each other, the exchange energy of two-particle states has a minimum at the point of the intersection of bonding and antibonding levels; the singlet and triplet states at this point are degenerate. For the lowest spin singlet, it has been revealed that Coulomb correlations in the motion of two holes are manifested in the localization of the two-particle wavefunction at opposite quantum dots when the distance between the dots increases. It has been shown that the degree of entanglement of the singlet quantum states reaches 50

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English version:
Journal of Experimental and Theoretical Physics Letters, 2012, 96:1, 75–83

Bibliographic databases:

Document Type: Article
Received: 15.05.2012

Citation: A. I. Yakimov, “Electronic structure of double Ge quantum dots in Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:1 (2012), 77–86; JETP Letters, 96:1 (2012), 75–83

Citation in format AMSBIB
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\paper Electronic structure of double Ge quantum dots in Si
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\pages 77--86
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