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Pis'ma v Zh. Èksper. Teoret. Fiz., 2012, Volume 96, Issue 7, Pages 484–491 (Mi jetpl3244)  

This article is cited in 26 scientific papers (total in 26 papers)


Giant Rashba-type spin splitting at polar surfaces of BiTeI

S. V. Eremeevab, I. A. Nechaevbc, E. V. Chulkovdc

a Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
b Tomsk State University
c Donostia International Physics Center
d Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country

Abstract: On the basis of relativistic ab-initio calculations, we show that both Te- and I-terminated surfaces of the polar layered semiconductor BiTeI hold surface states with a giant Rashba-type spin splitting. The Te-terminated surface state has nearly isotropic free-electron-like dispersion with a positive effective mass, which along with the giant spin splitting makes BiTeI fulfilling the requirements demanded by many semiconductor-spintronics applications. The I-terminated surface state with its negative effective-mass dispersion reproduces nicely the situation with the Rashba-split surface state on surfaces of noble-metal based surface alloys. The crucial advantage of BiTeI as compared with the surface alloys is the location of the I-terminated surface state in a quite wide band gap.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2012, 96:7, 437–444

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Document Type: Article
Received: 01.08.2012
Language: English

Citation: S. V. Eremeev, I. A. Nechaev, E. V. Chulkov, “Giant Rashba-type spin splitting at polar surfaces of BiTeI”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:7 (2012), 484–491; JETP Letters, 96:7 (2012), 437–444

Citation in format AMSBIB
\by S.~V.~Eremeev, I.~A.~Nechaev, E.~V.~Chulkov
\paper Giant Rashba-type spin splitting at polar surfaces of BiTeI
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2012
\vol 96
\issue 7
\pages 484--491
\jour JETP Letters
\yr 2012
\vol 96
\issue 7
\pages 437--444

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    This publication is cited in the following articles:
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    2. Landolt G., Eremeev S.V., Tereshchenko O.E., Muff S., Slomski B., Kokh K.A., Kobayashi M., Schmitt T., Strocov V.N., Osterwalder J., Chulkov E.V., Dil J.H., “Bulk and Surface Rashba Splitting in Single Termination Bitecl”, New J. Phys., 15 (2013), 085022  crossref  isi  elib  scopus
    3. Eremeev S.V., Rusinov I.P., Nechaev I.A., Chulkov E.V., “Rashba Split Surface States in Bitebr”, New J. Phys., 15 (2013), 075015  crossref  isi  scopus
    4. Rusinov I.P., Nechaev I.A., Eremeev S.V., Friedrich C., Bluegel S., Chulkov E.V., “Many-Body Effects on the Rashba-Type Spin Splitting in Bulk Bismuth Tellurohalides”, Phys. Rev. B, 87:20 (2013), 205103  crossref  adsnasa  isi  elib  scopus
    5. Yu. S. Ponosov, T. V. Kuznetsova, O. E. Tereshchenko, K. A. Kokh, E. V. Chulkov, “Dynamics of the BiTeI lattice at high pressures”, JETP Letters, 98:9 (2013), 557–561  mathnet  crossref  crossref  isi  elib  elib
    6. Fiedler S., El-Kareh L., Eremeev S.V., Tereshchenko O.E., Seibel Ch., Lutz P., Kokh K.A., Chulkov E.V., Kuznetsova T.V., Grebennikov V.I., Bentmann H., Bode M., Reinert F., “Defect and Structural Imperfection Effects on the Electronic Properties of Bitei Surfaces”, New J. Phys., 16 (2014), 075013  crossref  isi  scopus
    7. Butler Ch.J., Yang H.-H., Hong J.-Y., Hsu Sh.-H., Sankar R., Lu Ch.-I., Lu H.-Yu., Yang K.-H.O., Shiu H.-W., Chen Ch.-H., Kaun Ch.-Ch., Shu G.-J., Chou F.-Ch., Lin M.-Ts., “Mapping Polarization Induced Surface Band Bending on the Rashba Semiconductor Bitei”, Nat. Commun., 5 (2014), 4066  crossref  adsnasa  isi  scopus
    8. Gnezdilov V., Lemmens P., Wulferding D., Moeller A., Recher P., Berger H., Sankar R., Chou F.C., “Enhanced Quasiparticle Dynamics of Quantum Well States: the Giant Rashba System Bitei and Topological Insulators”, Phys. Rev. B, 89:19 (2014), 195117  crossref  adsnasa  isi  elib  scopus
    9. Khomitsky D.V. Chubanov A.A., “Edge States and Topological Properties of Electrons on the Bismuth on Silicon Surface with Giant Spin-Orbit Coupling”, J. Exp. Theor. Phys., 118:3 (2014), 457–466  crossref  adsnasa  isi  elib  scopus
    10. Tournier-Colletta C., Autes G., Kierren B., Bugnon Ph., Berger H., Fagot-Revurat Y., Yazyev O.V., Grioni M., Malterre D., “Atomic and Electronic Structure of a Rashba P-N Junction at the Bitei Surface”, Phys. Rev. B, 89:8 (2014), 085402  crossref  adsnasa  isi  elib  scopus
    11. Eremeev S.V., Nechaev I.A., Echenique P.M., Chulkov E.V., “Spin-Helical Dirac States in Graphene Induced By Polar-Substrate Surfaces With Giant Spin-Orbit Interaction: a New Platform For Spintronics”, Sci Rep, 4 (2014), 6900  crossref  adsnasa  isi  elib  scopus
    12. I. P. Rusinov, O. E. Tereshchenko, K. A. Kokh, A. R. Shakhmametova, I. A. Azarov, E. V. Chulkov, “Role of anisotropy and spin-orbit interaction in the optical and dielectric properties of BiTeI and BiTeCl compounds”, JETP Letters, 101:8 (2015), 507–512  mathnet  crossref  crossref  isi  elib  elib
    13. Kohsaka Y., Kanou M., Takagi H., Hanaguri T., Sasagawa T., “Imaging Ambipolar Two-Dimensional Carriers Induced By the Spontaneous Electric Polarization of a Polar Semiconductor Bitei”, Phys. Rev. B, 91:24 (2015), 245312  crossref  adsnasa  isi  elib  scopus
    14. Moreschini L., Autes G., Crepaldi A., Moser S., Johannsen J.C., Kim K.S., Berger H., Bugnon Ph., Magrez A., Denlinger J., Rotenberg E., Bostwick A., Yazyev O.V., Grioni M., “Bulk and Surface Band Structure of the New Family of Semiconductors Bitex (X=i, Br, Cl)”, J. Electron Spectrosc. Relat. Phenom., 201:SI (2015), 115–120  crossref  isi  elib  scopus
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    16. Sans J.A., Manjon F.J., Pereira A.L.J., Vilaplana R., Gomis O., Segura A., Munoz A., Rodriguez-Hernandez P., Popescu C., Drasar C., Ruleova P., “Structural, Vibrational, and Electrical Study of Compressed Bitebr”, Phys. Rev. B, 93:2 (2016), 024110  crossref  adsnasa  isi  elib  scopus
    17. Rusinov I.P., Menshchikova T.V., Sklyadneva I.Yu., Heid R., Bohnen K.-P., Chulkov E.V., “Pressure effects on crystal and electronic structure of bismuth tellurohalides”, New J. Phys., 18 (2016), 113003  crossref  isi  elib  scopus
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