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Pis'ma v Zh. Èksper. Teoret. Fiz.:

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Pis'ma v Zh. Èksper. Teoret. Fiz., 2012, Volume 96, Issue 12, Pages 870–874 (Mi jetpl3311)  

This article is cited in 12 scientific papers (total in 12 papers)


New topological surface state in layered topological insulators: unoccupied Dirac cone

S. V. Eremeevab, I. V. Silkinb, T. V. Men'shikovab, A. P. Protogenovc, E. V. Chulkovde

a Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
b Tomsk State University
c Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod
d Donostia International Physics Center
e Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country

Abstract: The unoccupied states in topological insulators Bi$_2$Se$_3$, PbSb$_2$Te$_4$, and Pb$_2$Bi$_2$Te$_2$S$_3$ are studied by the density functional theory methods. It is shown that a surface state with linear dispersion emerges in the inverted conduction band energy gap at the center of the surface Brillouin zone on the (0001) surface of these insulators. The alternative expression of $\mathbb{Z}_2$ invariant allowed us to show that a necessary condition for the existence of the second $\bar\Gamma$ Dirac cone is the presence of local gaps at the time reversal invariant momentum points of the bulk spectrum and change of parity in one of these points.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2012, 96:12, 780–784

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Document Type: Article
Received: 30.10.2012
Language: English

Citation: S. V. Eremeev, I. V. Silkin, T. V. Men'shikova, A. P. Protogenov, E. V. Chulkov, “New topological surface state in layered topological insulators: unoccupied Dirac cone”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:12 (2012), 870–874; JETP Letters, 96:12 (2012), 780–784

Citation in format AMSBIB
\by S.~V.~Eremeev, I.~V.~Silkin, T.~V.~Men'shikova, A.~P.~Protogenov, E.~V.~Chulkov
\paper New topological surface state in layered topological insulators:
unoccupied Dirac cone
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2012
\vol 96
\issue 12
\pages 870--874
\jour JETP Letters
\yr 2012
\vol 96
\issue 12
\pages 780--784

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    5. Khomitsky D.V., Chubanov A.A., “Edge States and Topological Properties of Electrons on the Bismuth on Silicon Surface with Giant Spin-Orbit Coupling”, J. Exp. Theor. Phys., 118:3 (2014), 457–466  crossref  adsnasa  isi  elib  scopus
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    7. Niesner D., Otto S., Fauster T., Chulkov E.V., Eremeev S.V., Tereshchenko O.E., Kokh K.A., “Electron Dynamics of Unoccupied States in Topological Insulators”, J. Electron Spectrosc. Relat. Phenom., 195 (2014), 258–262  crossref  isi  elib  scopus
    8. Patankar Sh., Hinton J.P., Griesmar J., Orenstein J., Dodge J.S., Kou X., Pan L., Wang K.L., Bestwick A.J., Fox E.J., Goldhaber-Gordon D., Wang J., Zhang Sh.-Ch., “Resonant Magneto-Optic Kerr Effect in the Magnetic Topological Insulator Cr:(Sb-X,Bi1-X)(2)Te-3”, Phys. Rev. B, 92:21 (2015), 214440  crossref  adsnasa  isi  elib  scopus
    9. C. Kastl, C. Karnetzky, A. Brenneis, F. Langrieger, A. Holleitner, “Topological Insulators as Ultrafast Auston Switches in On-Chip THz-Circuits”, IEEE J. Sel. Top. Quantum Electron., 23:4 (2017), 8700305  crossref  isi  scopus
    10. R. V. Turkevich, A. A. Perov, A. P. Protogenov, E. V. Chulkov, “Electronic states with nontrivial topology in Dirac materials”, JETP Letters, 106:3 (2017), 188–198  mathnet  crossref  crossref  isi  elib
    11. V. V. Tugushev, E. T. Kulatov, K. M. Golant, “Features of the electronic spectrum and optical absorption of ultrathin Bi$_2$Se$_3$ films”, JETP Letters, 106:7 (2017), 422–428  mathnet  crossref  crossref  isi  elib
    12. R. V. Turkevich, V. Ya. Demikhovskii, A. P. Protogenov, “Cyclotron Resonance Features in a Three-Dimensional Topological Insulators”, Semiconductors, 51:11 (2017), 1495–1499  crossref  isi  scopus
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