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Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 89, Issue 1, Pages 32–37 (Mi jetpl332)  

This article is cited in 17 scientific papers (total in 17 papers)

CONDENSED MATTER

High transparency of a two-photon scattering channel in triple-barrier structures

A. B. Pashkovskii

State Scientific-Production Enterprise "Istok"

Abstract: An analytical solution of the Schrödinger equation with open boundary conditions in all scattering channels has been found for asymmetric triple-barrier resonance-tunneling structures with thin high barriers. This solution describes resonance transitions between three quantum levels in a high rf electric field. It is found that, under certain conditions, most electrons incident on the upper resonance level can emit two photons and leave a structure through the lower level without intermediate interaction with phonons. The structure appears to be almost absolutely transparent in a wide range of the rf field amplitude. This behavior fundamentally distinguishes the multiphoton scattering process from previously considered single-photon scattering processes and the quantum efficiency of such transitions can be twice as high as the maximum quantum efficiency of the transitions between neighboring levels and can reach a value of 160% in the limiting case.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2009, 89:1, 30–34

Bibliographic databases:

PACS: 73.40.-c
Received: 23.10.2008
Revised: 21.11.2008

Citation: A. B. Pashkovskii, “High transparency of a two-photon scattering channel in triple-barrier structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:1 (2009), 32–37; JETP Letters, 89:1 (2009), 30–34

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  • http://mi.mathnet.ru/eng/jetpl/v89/i1/p32

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Seti J., Tkach M., Voitsekhivska O., Condensed Matter Physics, 14:1 (2011), 13701  crossref  isi  elib  scopus
    2. Tkach N.V., Seti J.A., Physics of the Solid State, 53:3 (2011), 590–598  crossref  adsnasa  isi  scopus
    3. Tkach N.V., Seti J.A., Semiconductors, 45:3 (2011), 376–384  crossref  adsnasa  isi  elib  scopus
    4. A. B. Pashkovskii, JETP Letters, 93:10 (2011), 559–563  mathnet  crossref  isi
    5. Pashkovskii A.B., Semiconductors, 45:6 (2011), 743–748  crossref  adsnasa  isi  elib  scopus
    6. Tkach N.V. Seti J.A. Matijek V.A. Boyko I.V., Semiconductors, 46:10 (2012), 1304–1309  crossref  adsnasa  isi  elib  scopus
    7. Seti J.O., Tkach M.V., Boyko I.V., J. Optoelectron. Adv. Mater., 14:3-4 (2012), 393–400  isi  elib
    8. Tkach M.V. Seti Yu.O. Voitsekhivska O.M. Zegrya G.G., Rom. J. Phys., 57:3-4 (2012), 620–629  isi  elib
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    10. Zegrya G.G., Tkach N.V., Boiko I.V., Seti Yu.A., Phys. Solid State, 55:10 (2013), 2182–2189  crossref  adsnasa  isi  elib  scopus
    11. Tkach M.V., Seti J.O., Boyko I.V., Voitsekhivska O.M., Condens. Matter Phys., 16:3 (2013)  crossref  isi  elib  scopus
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    13. Tkach N.V., Seti J.A., Grynyshyn Yu.B., Semiconductors, 49:4 (2015), 529–539  crossref  adsnasa  isi  elib  scopus
    14. Boyko I.V., Petryk M.R., Tsupryk H.B., J. Nano Electron. Phys., 7:4 (2015), 04078  isi
    15. Boyko I.V., Ukr. J. Phys., 61:1 (2016), 66–74  crossref  mathscinet  isi  elib  scopus
    16. Pashkovskii A.B., Semiconductors, 51:5 (2017), 594–603  crossref  isi  scopus
    17. Pashkovskii A.B., Semiconductors, 51:4 (2017), 430–437  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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