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Pis'ma v Zh. Èksper. Teoret. Fiz., 2013, Volume 97, Issue 3, Pages 170–175 (Mi jetpl3346)  

This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Observation of crossover from weak localization to antilocalization in the temperature dependence of the resistance of a two-dimensional system with spin-orbit interaction

S. I. Dorozhkin, A. A. Kapustin, S. S. Murzin

Institute of Solid State Physics, Russian Academy of Sciences

Abstract: A nonmonotonic temperature dependence of the resistance with a maximum in the temperature range of $2$$4$ K whose position depends on the hole density has been observed in hole channels of silicon field-effect transistors. The spin-orbit hole relaxation time and the temperature dependences of the phase relaxation time of the electron wave have been obtained from the measurements of the alternating sign anomalous magnetoresistance. The nonmonotonic temperature dependence of the resistance can be described by the formulas of weak-localization theory with these parameters. The maximum appears owing to a temperature-induced change in the relation between the measured times. As a result, the localization behavior of the conductivity at high temperatures is changed to the antilocalization behavior at low temperatures. The inclusion of quantum corrections to the conductivity caused by the electron-electron interaction improves quantitative agreement between the experiment and calculation. Thus, it has been demonstrated that, in contrast to the widely accepted concept, there is a region of the parameters where the electron-electron interaction does not change the antilocalization (metallic) type of the temperature dependence of the resistance.

DOI: https://doi.org/10.7868/S0370274X13030077

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English version:
Journal of Experimental and Theoretical Physics Letters, 2013, 97:3, 149–151

Bibliographic databases:

Document Type: Article
Received: 09.11.2012
Revised: 09.01.2013

Citation: S. I. Dorozhkin, A. A. Kapustin, S. S. Murzin, “Observation of crossover from weak localization to antilocalization in the temperature dependence of the resistance of a two-dimensional system with spin-orbit interaction”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:3 (2013), 170–175; JETP Letters, 97:3 (2013), 149–151

Citation in format AMSBIB
\Bibitem{DorKapMur13}
\by S.~I.~Dorozhkin, A.~A.~Kapustin, S.~S.~Murzin
\paper Observation of crossover from weak localization to antilocalization in the temperature dependence of the resistance of a two-dimensional system with spin-orbit interaction
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2013
\vol 97
\issue 3
\pages 170--175
\mathnet{http://mi.mathnet.ru/jetpl3346}
\crossref{https://doi.org/10.7868/S0370274X13030077}
\elib{http://elibrary.ru/item.asp?id=18854547}
\transl
\jour JETP Letters
\yr 2013
\vol 97
\issue 3
\pages 149--151
\crossref{https://doi.org/10.1134/S002136401303003X}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000317966100007}
\elib{http://elibrary.ru/item.asp?id=20434882}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84876439708}


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    This publication is cited in the following articles:
    1. A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy, Y. Byldina, “Magnetoresistance of Doped Te:GaSb Whiskers”, Proceedings of the 2017 IEEE 7Th International Conference Nanomaterials: Application & Properties (Nap), Proceedings of the International Conference Nanomaterials-Applications and Properties, eds. A. Pogrebnjak, V. Novosad, P. Zukowski, S. Protsenko, Y. Shabelnyk, IEEE, 2017, UNSP 04NESP11  isi
    2. A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy, “Low-Temperature Magnetoresistance of GaSb Whiskers”, Low Temp. Phys., 43:6 (2017), 692–698  crossref  isi  scopus
    3. Rortais F., Lee S., Ohshima R., Dushenko S., Ando Y., Shiraishi M., “Spin-Orbit Coupling Induced By Bismuth Doping in Silicon Thin Films”, Appl. Phys. Lett., 113:12 (2018), 122408  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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