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Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 89, Issue 1, Pages 49–53 (Mi jetpl335)  

This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

Nonequilibrium state of the two-dimensional electron gas in the integer quantum Hall effect regime

M. V. Budantseva, A. G. Pogosova, A. E. Plotnikova, A. K. Bakarova, A. I. Toropova, J. C. Portalbcd

a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS
b GHMFL-CNRS, BP-166, F-38042 Grenoble, Cedex 9, France
c INSA-Toulouse, Toulouse 31077, Cedex 4, France
d Institut Universitaire de France, Toulouse, France

Abstract: We have compared the properties of the nonequilibrium state of the two-dimensional electron gas observed in the samples of different types by means of magnetotransport and magnetization measurements in the quantum Hall effect regime at integer filling factors n. It has been found that the range of filling factors corresponding to the nonequilibrium state is universal for the samples of different types and different measurement techniques and varies from 0.1 to 0.3 for n changing from 1 to 4. The comparison indicates that the observed nonequilibrium state is not directly caused by the appearance of eddy currents and the dielectric phase in the two-dimensional electron gas but is probably associated with the magnetic field-induced phase transition.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2009, 89:1, 46–49

Bibliographic databases:

PACS: 71.45.-d, 73.23.-b, 73.43.-f
Received: 27.12.2007
Revised: 25.11.2008

Citation: M. V. Budantsev, A. G. Pogosov, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov, J. C. Portal, “Nonequilibrium state of the two-dimensional electron gas in the integer quantum Hall effect regime”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:1 (2009), 49–53; JETP Letters, 89:1 (2009), 46–49

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. JETP Letters, 89:2 (2009), 92–95  mathnet  crossref  isi
    2. Budantsev M.V. Pogosov A.G. Pokhabov D.A. Zhdanov E.Yu. Bakarov A.K. Toropov A.I., 20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics (Hmf-20), Journal of Physics Conference Series, 456, IOP Publishing Ltd, 2013  crossref  isi  scopus
    3. Budantsev M.V., Pokhabov D.A., Pogosov A.G., Zhdanov E.Yu., Bakarov A.K., Toropov A.I., Semiconductors, 48:11 (2014), 1423–1431  crossref  adsnasa  isi  elib  scopus
    4. Pokhabov D.A. Pogosov A.G. Budantsev M.V. Zhdanov E.Yu. Bakarov A.K., Semiconductors, 50:8 (2016), 1049–1053  crossref  isi  elib  scopus
    5. Pogosov A.G. Budantsev M.V. Shevyrin A.A. Zhdanov E.Yu. Pokhabov D.A., Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, ed. Latyshev A. Dvurechenskii A. Aseev A., Elsevier Science BV, 2017, 101–129  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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