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Pis'ma v Zh. Èksper. Teoret. Fiz., 2013, Volume 97, Issue 5, Pages 297–303 (Mi jetpl3367)  

This article is cited in 13 scientific papers (total in 13 papers)

CONDENSED MATTER

Interface induced states at the boundary between a $3D$ topological insulator and a normal insulator

V. N. Men'shova, V. V. Tugusheva, E. V. Chulkovbc

a National Research Centre "Kurchatov Institute"
b Tomsk State University
c Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country

Abstract: We show that, when a three-dimensional ($3D$) narrow-gap semiconductor with inverted band gap (“topological insulator”, TI) is attached to a $3D$ wide-gap semiconductor with non-inverted band gap (“normal insulator”, NI), two types of bound electron states having different spatial distributions and spin textures arise at the TI/NI interface. Namely, the gapless (“topological”) bound state can be accompanied by the emergence of the gapped (“ordinary”) bound state. We describe these states in the framework of the envelope function method using a variational approach for the energy functional; their existence hinges on the ambivalent character of the constraint for the envelope functions that correspond to the “open” or “natural” boundary conditions at the interface. The properties of the ordinary state strongly depend on the effective interface potential, while the topological state is insensitive to the interface potential variation.

DOI: https://doi.org/10.7868/S0370274X13050044

Full text: PDF file (326 kB)
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English version:
Journal of Experimental and Theoretical Physics Letters, 2013, 97:5, 258–264

Bibliographic databases:

Document Type: Article
Received: 29.01.2013
Language: English

Citation: V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Interface induced states at the boundary between a $3D$ topological insulator and a normal insulator”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:5 (2013), 297–303; JETP Letters, 97:5 (2013), 258–264

Citation in format AMSBIB
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\by V.~N.~Men'shov, V.~V.~Tugushev, E.~V.~Chulkov
\paper Interface induced states at the boundary between a $3D$
topological insulator and a normal insulator
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Eremeev S.V. Men'shov V.N. Tugushev V.V. Echenique P.M. Chulkov E.V., “Magnetic Proximity Effect at the Three-Dimensional Topological Insulator/Magnetic Insulator Interface”, Phys. Rev. B, 88:14 (2013), 144430  crossref  adsnasa  isi  elib  scopus
    2. Men'shov V.N., Tugushev V.V., Eremeev S.V., Echenique P.M., Chulkov E.V., “Magnetic Proximity Effect in the Three-Dimensional Topological Insulator/Ferromagnetic Insulator Heterostructure”, Phys. Rev. B, 88:22 (2013), 224401  crossref  adsnasa  isi  scopus
    3. Men'shov V.N. Tugushev V.V. Menshchikova T.V. Eremeev S.V. Echenique P.M. Chulkov E.V., “Modelling Near-Surface Bound Electron States in a 3D Topological Insulator: Analytical and Numerical Approaches”, J. Phys.-Condes. Matter, 26:48 (2014), 485003  crossref  mathscinet  isi  scopus
    4. Manna P.K., Yusuf S.M., “Two Interface Effects: Exchange Bias and Magnetic Proximity”, Phys. Rep.-Rev. Sec. Phys. Lett., 535:2 (2014), 61–99  crossref  adsnasa  isi  scopus
    5. Men'shov V.N. Tugushev V.V. Eremeev S.V. Echenique P.M. Chulkov E.V., “Band Bending Driven Evolution of the Bound Electron States At the Interface Between a Three-Dimensional Topological Insulator and a Three-Dimensional Normal Insulator”, Phys. Rev. B, 91:7 (2015), 075307  crossref  adsnasa  isi  scopus
    6. Li M. Cui W. Yu J. Dai Z. Wang Zh. Katmis F. Guo W. Moodera J., “Magnetic Proximity Effect and Interlayer Exchange Coupling of Ferromagnetic/Topological Insulator/Ferromagnetic Trilayer”, Phys. Rev. B, 91:1 (2015), 014427  crossref  mathscinet  adsnasa  isi  elib  scopus
    7. JETP Letters, 102:11 (2015), 754–759  mathnet  crossref  crossref  isi  elib
    8. V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Quantum anomalous Hall effect in magnetically modulated topological insulator/normal insulator heterostructures”, JETP Letters, 104:7 (2016), 453–459  mathnet  crossref  crossref  isi  elib
    9. Men'shov V.N., Tugushev V.V., Chulkov E.V., “Anomalous Hall and spin Hall conductivities in three-dimensional ferromagnetic topological insulator/normal insulator heterostructures”, EPL, 114:3 (2016), 37003  crossref  isi  scopus
    10. F. M. Muntyanu, A. Gilewski, A. J. Zaleski, V. Chistol, K. Rogacki, “Coexistence of superconductivity and weak ferromagnetism at the interface of twisting bicrystals of 3D topological insulator Bi$_{1-x}$Sb$_x$ ($0.07 < x < 0.2$)”, Phys. Lett. A, 381:24 (2017), 2040–2043  crossref  isi  scopus
    11. V. N. Men'shov, I. A. Shvets, V. V. Tugushev, E. V. Chulkov, “Intrinsic Spin Hall Conductivity in Three-Dimensional Topological Insulator/Normal Insulator Heterostructures”, Phys. Rev. B, 96:7 (2017), 075302  crossref  mathscinet  isi  scopus
    12. Men'shov V.N. Shvets I.A. Tugushev V.V. Chulkov E.V., “Interface Induced Quantized Spin Hall Response in Three-Dimensional Topological Insulator/Normal Insulator Heterostructures”, J. Magn. Magn. Mater., 459:SI (2018), 231–235  crossref  isi  scopus
    13. Tugushev V.V. Men'shov V.N. Shvets I.A. Chulkov E.V., “Quantum Anomalous Hall Conductivity in 3D Magnetic Topological Insulator/Normal Insulator Heterostructures”, J. Magn. Magn. Mater., 459:SI (2018), 335–339  crossref  isi  scopus
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