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Pis'ma v Zh. Èksper. Teoret. Fiz., 2013, Volume 97, Issue 8, Pages 536–540 (Mi jetpl3404)  

This article is cited in 6 scientific papers (total in 6 papers)

CONDENSED MATTER

Features of the structure and defect states in hydrogenated polymorphous silicon films

A. V. Emelyanova, E. A. Konstantinovaa, P. A. Forshab, A. G. Kazanskiia, M. V. Khenkina, N. N. Petrovaa, E. I. Terukovc, D. A. Kirilenkoc, N. A. Bertc, S. G. Konnikovc, P. K. Kashkarovac

a M. V. Lomonosov Moscow State University, Faculty of Physics
b National Research Centre "Kurchatov Institute"
c Ioffe Physico-Technical Institute, Russian Academy of Sciences

Abstract: The structural and electronic properties of thin hydrogenated polymorphous silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H$_2$) and monosilane (SiH$_4$) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of $4$$5$ nm and the volume fraction of $10%$. A signal was observed in the hydrogenated polymorphous silicon films during the EPR investigation that is attributed to the electrons trapped in the conduction band tail of microcrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material.

DOI: https://doi.org/10.7868/S0370274X13080067

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English version:
Journal of Experimental and Theoretical Physics Letters, 2013, 97:8, 466–469

Bibliographic databases:

Document Type: Article
Received: 13.02.2013

Citation: A. V. Emelyanov, E. A. Konstantinova, P. A. Forsh, A. G. Kazanskii, M. V. Khenkin, N. N. Petrova, E. I. Terukov, D. A. Kirilenko, N. A. Bert, S. G. Konnikov, P. K. Kashkarov, “Features of the structure and defect states in hydrogenated polymorphous silicon films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013), 536–540; JETP Letters, 97:8 (2013), 466–469

Citation in format AMSBIB
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\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
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\pages 536--540
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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Khenkin M., Kazanskii A., Emelyanov A., Forsh P., Kim K.H., Cariou R., Roca i Cabarrocas P., “Structural, Optical and Photoelectric Properties of Hydrogenated Polymorphous Silicon”, 2013 IEEE 39th Photovoltaic Specialists Conference (Pvsc), IEEE Photovoltaic Specialists Conference, IEEE, 2013, 563–567  isi
    2. Khenkin M., Emelyanov A., Kazanskii A., Forsh P., Beresna M., Gecevicius M., Kazansky P., “Effect of Hydrogen Concentration on Structure and Photoelectric Properties of a-Si:H Films Modified by Femtosecond Laser Pulses”, Can. J. Phys., 92:7-8, SI (2014), 883–887  crossref  adsnasa  isi  elib  scopus
    3. Emelyanov A.V., Kazanskii A.G., Forsh P.A., Zhigunov D.M., Khenkin M.V., Petrova N.N., Kukin A.V., Terukov E.I., Kashkarov P.K., “Photoluminescence Features of Hydrogenated Silicon Films With Amorphous/Nanocrystalline Mixed Phase”, J. Nanoelectron. Optoelectron., 10:5 (2015), 649–652  crossref  isi  elib  scopus
    4. Konstantinova E.A., Emelyanov A.V., Forsh P.A., Kashkarov P.K., “Influence of Formation Conditions on Structure and Properties of Paramagnetic Centers in Polymorphous Silicon Films”, Appl. Magn. Reson., 47:7, SI (2016), 693–700  crossref  isi  elib  scopus
    5. Krivyakin G.K., Volodin V.A., Kochubei S.A., Kamaev G.N., Purkrt A., Remes Z., Fajgar R., Stuchlikova T.H., Stuchlik J., “Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing”, Semiconductors, 50:7 (2016), 935–940  crossref  isi  elib  scopus
    6. Denisova K.N., Il'in A.S., Martyshov M.N., Vorontsov A.S., “Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated With Femtosecond Laser Pulses”, Phys. Solid State, 60:4 (2018), 640–643  crossref  isi  scopus
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