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Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 89, Issue 2, Pages 80–83 (Mi jetpl341)  

This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride

P. G. Sennikova, S. V. Golubeva, V. I. Shashkinb, D. A. Pryakhinb, M. N. Drozdovb, B. A. Andreevb, Yu. N. Drozdovb, A. S. Kuznetsov, H. Polc

a Institute of Applied Physics, Russian Academy of Sciences
b Institute for Physics of Microstructures, Russian Academy of Sciences
c VITCON Projetconsult GmbH, D-07743 Jena, Germany

Abstract: The production of silicon layers using plasma enhanced chemical vapor deposition in the mixture of silicon tetrafluoride and hydrogen is reported. The samples have been analyzed by X-ray diffraction, Raman spectroscopy, and secondary ion mass spectrometry. The phase composition of the layers is nanocrystalline silicon with the crystalline-domain sizes from 3 to 9 nm in dependence of the conditions of the process. The samples are characterized by intense photoluminescence at room temperature.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2009, 89:2, 73–75

Bibliographic databases:

PACS: 52.77.Dq, 61.46.Hk, 73.63.Bd, 81.07.Bc
Received: 02.12.2008

Citation: P. G. Sennikov, S. V. Golubev, V. I. Shashkin, D. A. Pryakhin, M. N. Drozdov, B. A. Andreev, Yu. N. Drozdov, A. S. Kuznetsov, H. Pol, “Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 80–83; JETP Letters, 89:2 (2009), 73–75

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Vainshtein J.S., Kon'kov O.I., Kukin A.V., El'tsina O.S., Belyakov L.V., Terukov E.I., Sreseli O.M., “Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane”, Semiconductors, 45:3 (2011), 302–305  crossref  adsnasa  isi  elib  scopus
    2. Nikolenko A.S., Sopinskyy M.V., Strelchuk V.V., Veligura L.I., Gomonovych V.V., “Raman Study of Si Nanoparticles Formation in the Annealed Siox and Siox:Er,F Films on Sapphire Substrate”, J. Optoelectron. Adv. Mater., 14:1-2 (2012), 120–124  isi  elib
    3. Sennikov P.G., Kornev R.A., Abrosimov N.V., “Production of Stable Silicon and Germanium Isotopes Via Their Enriched Volatile Compounds”, J. Radioanal. Nucl. Chem., 306:1 (2015), 21–30  crossref  isi  elib  scopus
    4. Wang J., Florea I., Bulkin P.V., Maurice J.-L., Johnson E.V., “Using Mdecr-Pecvd to Study the Impact of Ion Bombardment Energy on Microstructural Properties of Mu C-Si:H Thin Film Grown From An Sif4/H-2 Chemistry”, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 13 No 10-12, Physica Status Solidi C-Current Topics in Solid State Physics, 13, no. 10-12, ed. Hildebrandt S., Wiley-V C H Verlag Gmbh, 2016, 782–785  crossref  isi  scopus
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