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Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 89, Issue 2, Pages 94–97 (Mi jetpl344)  

This article is cited in 1 scientific paper (total in 1 paper)

CONDENSED MATTER

Formation of the GaAs-Ge heterointerface in the presence of oxide

S. P. Suprun, E. V. Fedosenko

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS

Abstract: The data of the X-ray photoelectron spectroscopy and reflection high-energy electron diffraction studies of the formation of the GaAs-Ge heterointerface under incomplete removal of all oxide phases from the GaAs substrate surface are presented. It is shown that the combination of the processes of final Ga2O desorption and Ge deposition allows one to avoid the evaporation of As and the stoichiometry distortion near the interface.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2009, 89:2, 84–87

Bibliographic databases:

PACS: 73.20.-r, 73.40.Lq, 81.15.Hi
Received: 09.12.2008

Citation: S. P. Suprun, E. V. Fedosenko, “Formation of the GaAs-Ge heterointerface in the presence of oxide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 94–97; JETP Letters, 89:2 (2009), 84–87

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    This publication is cited in the following articles:
    1. Asthana P.K., Ghosh B., Goswami Y., Tripathi Ball Mukund Mani, “High-Speed and Low-Power Ultradeep-Submicrometer III-V Heterojunctionless Tunnel Field-Effect Transistor”, IEEE Trans. Electron Devices, 61:2, SI (2014), 479–486  crossref  adsnasa  isi  elib  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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