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Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 99, Issue 2, Pages 81–86 (Mi jetpl3639)  

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots

D. S. Abramkina, V. T. Shamirzaevb, M. A. Putyatoa, A. K. Gutakovskiia, T. S. Shamirzaevac

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
c Novosibirsk State University

Abstract: Band alignment of heterostructures with pseudomorphic GaSb$_{1-x}$P$_{x}$/GaP self-assembled quantum dots (SAQDs) lying on wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the X$_{XY}$ valley of GaSb$_{1-x}$P$_{x}$ conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition $x$. It is shown that type-I – type-II transition is a result of GaP matrix deformation around the SAQD.

DOI: https://doi.org/10.7868/S0370274X14020040

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English version:
Journal of Experimental and Theoretical Physics Letters, 2014, 99:2, 76–81

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Received: 08.11.2013
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Citation: D. S. Abramkin, V. T. Shamirzaev, M. A. Putyato, A. K. Gutakovskii, T. S. Shamirzaev, “Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014), 81–86; JETP Letters, 99:2 (2014), 76–81

Citation in format AMSBIB
\Bibitem{AbrShaPut14}
\by D.~S.~Abramkin, V.~T.~Shamirzaev, M.~A.~Putyato, A.~K.~Gutakovskii, T.~S.~Shamirzaev
\paper Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP
heterostructures with pseudomorphic self-assembled quantum dots
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2014
\vol 99
\issue 2
\pages 81--86
\mathnet{http://mi.mathnet.ru/jetpl3639}
\crossref{https://doi.org/10.7868/S0370274X14020040}
\elib{http://elibrary.ru/item.asp?id=21305878}
\transl
\jour JETP Letters
\yr 2014
\vol 99
\issue 2
\pages 76--81
\crossref{https://doi.org/10.1134/S0021364014020027}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000334246800004}
\elib{http://elibrary.ru/item.asp?id=21871634}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84897948365}


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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. D. S. Abramkin, A. K. Gutakovskii, T. S. Shamirzaev, J. Appl. Phys., 123:11 (2018), 115701  crossref  isi  scopus
    2. Abramkin D.S. Shamirzaev T.S., Semiconductors, 53:5 (2019), 703–710  crossref  isi
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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