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Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 99, Issue 5, Pages 325–328 (Mi jetpl3680)  

This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

High-pressure thermoelectric characteristics of Bi$_2$Te$_3$ semiconductor with different charge carrier densities

V. V. Brazhkin, A. I. Orlov

Institute for High Pressure Physics, Russian Academy of Sciences

Abstract: The measurements of the absolute values of the thermopower and of the relative electrical resistance have been performed for $n$ type Bi$_2$Te$_3$ under hydrostatic pressure up to $9$ GPa at room temperature. Under pressures exceeding $5$ GPa and up to the phase transition (at $7$ GPa), the samples with the charge carrier density below $10^{19} $cm$^{-3}$ exhibit an anomalous growth of the thermopower. For the purest sample ($n=10^{18} $cm$^{-3}$), the thermopower is as high as $+150 \mu$V/K. The pressure dependence of the electrical resistance for $n$-Bi$_2$Te$_3$ does not exhibit any anomalies up to the pressure corresponding to the phase transition ($7$ GPa). Thus, the state with the giant thermoelectric efficiency is found in Bi$_2$Te$_3$ under pressure before the phase transition.

DOI: https://doi.org/10.7868/S0370274X14050099

Full text: PDF file (182 kB)
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English version:
Journal of Experimental and Theoretical Physics Letters, 2014, 99:5, 283–285

Bibliographic databases:

Received: 30.01.2014

Citation: V. V. Brazhkin, A. I. Orlov, “High-pressure thermoelectric characteristics of Bi$_2$Te$_3$ semiconductor with different charge carrier densities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:5 (2014), 325–328; JETP Letters, 99:5 (2014), 283–285

Citation in format AMSBIB
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\by V.~V.~Brazhkin, A.~I.~Orlov
\paper High-pressure thermoelectric characteristics of Bi$_2$Te$_3$ semiconductor with different charge carrier densities
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\yr 2014
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\pages 325--328
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