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Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 2, Pages 94–98 (Mi jetpl3781)  

This article is cited in 11 scientific papers (total in 11 papers)


Organic light-emitting diode with an emitter based on a planar layer of CdSe semiconductor nanoplatelets

A. A. Vashchenkoa, A. G. Vitukhnovskya, V. S. Lebedevab, A. S. Selykova, R. B. Vasilievc, M. S. Sokolikovac

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
c M. V. Lomonosov Moscow State University

Abstract: Colloidal CdSe semiconductor nanoplatelets with characteristic longitudinal sizes of $20$$70$ nm and thicknesses of several atomic layers are synthesized. The spectra and kinetics of the photoluminescence of these quasi-two-dimensional nanostructures (quantum wells) at room and cryogenic temperatures are investigated. A hybrid light-emitting diode with the electron and hole transport layers based on TAZ and TPD organic compounds, respectively, and the active “emissive” element based on a layer of such single-component nanoplatelets is designed. The spectral and electrical characteristics of the fabricated device, emitting at a wavelength of $\lambda = 515$ nm, are determined. The use of quasi-two-dimensional nanostructures of this kind (nanoplatelets) is promising for the fabrication of hybrid light-emitting diodes with pure colors.


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English version:
Journal of Experimental and Theoretical Physics Letters, 2014, 100:2, 86–90

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Document Type: Article
Received: 05.06.2014

Citation: A. A. Vashchenko, A. G. Vitukhnovsky, V. S. Lebedev, A. S. Selykov, R. B. Vasiliev, M. S. Sokolikova, “Organic light-emitting diode with an emitter based on a planar layer of CdSe semiconductor nanoplatelets”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014), 94–98; JETP Letters, 100:2 (2014), 86–90

Citation in format AMSBIB
\by A.~A.~Vashchenko, A.~G.~Vitukhnovsky, V.~S.~Lebedev, A.~S.~Selykov, R.~B.~Vasiliev, M.~S.~Sokolikova
\paper Organic light-emitting diode with an emitter based on a planar layer of CdSe semiconductor nanoplatelets
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2014
\vol 100
\issue 2
\pages 94--98
\jour JETP Letters
\yr 2014
\vol 100
\issue 2
\pages 86--90

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    This publication is cited in the following articles:
    1. Quantum Electron., 45:9 (2015), 853–857  mathnet  crossref  isi  elib
    2. Quantum Electron., 45:12 (2015), 1153–1160  mathnet  crossref  isi  elib
    3. Katsaba A.V., Fedyanin V.V., Ambrozevich S.A., Vitukhnovsky A.G., Sokolikova M.S., Vasiliev R.B., “Density of Surface States in Colloidal Cdse Nanoplatelets”, Semiconductors, 49:10 (2015), 1323–1326  crossref  adsnasa  isi  elib  scopus
    4. Kondorskiy A.D. Kislov K.S. Lam N.T. Lebedev V.S., “Absorption of Light By Hybrid Metalorganic Nanostructures of Elongated Shape”, J. Russ. Laser Res., 36:2 (2015), 175–192  crossref  isi  elib  scopus
    5. S. P. Eliseev, A. G. Vitukhnovsky, D. A. Chubich, N. S. Kurochkin, V. V. Sychev, A. A. Marchenko, “Picosecond time of spontaneous emission in plasmonic patch nanoantennas”, JETP Letters, 103:2 (2016), 82–86  mathnet  crossref  crossref  isi  elib
    6. A. G. Vitukhnovsky, D. A. Chubich, S. P. Eliseev, V. V. Sychev, D. A. Kolymagin, A. S. Selyukov, “Advantages of Sted-Inspired 3D Direct Laser Writing For Fabrication of Hybrid Nanostructures”, J. Russ. Laser Res., 38:4 (2017), 375–382  crossref  isi  scopus
    7. Kondorskiy A.D. Nguyen Thanh Lam Lebedev V.S., “Absorption and Scattering of Light By Silver and Gold Nanodisks and Nanoprisms”, J. Russ. Laser Res., 39:1 (2018), 56–66  crossref  isi  scopus
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    9. Quantum Electron., 48:11 (2018), 1035–1042  mathnet  crossref  isi  elib
    10. Gudilin E.A. Semenova A.A. Petrov A.A. Tarasov A.B. Lukashin A.V. Solntsev K.A., “Development of Modern Fundamental Materials Science At the Faculty of Materials Science of the Moscow State University”, Inorg. Mater., 54:13 (2018), 1330–1362  crossref  isi
    11. Mikhailov I A., Kabanov V.F., Glukhovskoy E.G., Shishkin I M., Gavrikov V M., “Methodology of Analyzing the Cdse Semiconductor Quantum Dots Parameters”, Nanosyst.-Phys. Chem. Math., 9:4 (2018), 464–467  crossref  isi
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