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Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 89, Issue 7, Pages 396–401 (Mi jetpl397)  

This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

Nondiffusion atomic ordering in the low-temperature deposition of copper

I. G. Marchenkoa, I. I. Marchenkob

a National Science Centre Kharkov Institute of Physics and Technology
b Khar'kov Polytechnical University

Abstract: A new mechanism of atomic ordering in the low-temperature homoepitaxial deposition of copper onto a close-packed (111) plane has been discovered by means of molecular-dynamics simulation. This nondiffusion mechanism is caused by the collective motion of clusters along the dislocation lines of partial Shockley dislocations. We predict the existence of dislocation-induced coalescence, which is an increase in the mean size of face-centered cubic (fcc) clusters owing to a decrease in the number of hexagonal close-packed (hcp) clusters due to the motion of surface dislocations.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2009, 89:7, 337–341

Bibliographic databases:

PACS: 07.05.Tp, 68.55.-a, 68.55.A
Received: 04.02.2009
Revised: 26.02.2009

Citation: I. G. Marchenko, I. I. Marchenko, “Nondiffusion atomic ordering in the low-temperature deposition of copper”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:7 (2009), 396–401; JETP Letters, 89:7 (2009), 337–341

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Marchenko I.G., Marchenko I.I., “A role of dislocation-induced coalescence in the formation of a cluster structure in deposited films”, Surface Science, 605:13–14 (2011), 1157–1164  crossref  adsnasa  isi  elib  scopus
    2. Marchenko I.G., Marchenko I.I., “Role of Dislocation-Induced Coalescence in Formation of Cluster Structure in Deposited Films”, Metallofizika i Noveishie Tekhnologii, 33:4 (2011), 501–518  mathscinet  isi
    3. Kuvyrkin G.N., Zhuravskii A.V., Savel'eva I.Yu., “Mathematical Modeling of Chemical Vapor Deposition of Material on a Curvilinear Surface”, J. Eng. Phys. Thermophys., 89:6 (2016), 1374–1379  crossref  isi  scopus
    4. G. N. Kuvyrkin, I. Yu. Savelyeva, A. V. Zhuravsky, “Numerical modelling of vapor phase epitaxy with diffusion processes”, Math. Models Comput. Simul., 10:3 (2018), 299–307  mathnet  crossref  elib
    5. Savel'eva I.Yu., Zhuravskii A.V., “Modeling of Thermal Processes During Vapor Deposition of Material on Curvilinear Surface”, International Conference Problems of Thermal Physics and Power Engineering (PTPPE-2017), Journal of Physics Conference Series, 891, IOP Publishing Ltd, 2017, UNSP 012134  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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