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Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 6, Pages 442–446 (Mi jetpl4128)  

This article is cited in 6 scientific papers (total in 6 papers)

CONDENSED MATTER

Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$

A. Yu. Dmitrievab, N. I. Fedotovab, V. F. Nasretdinovab, S. V. Zaitsev-Zotovba

a Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow

Abstract: The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new subsurface defects whose location and charge correspond to $p$-type conduction of grown crystals. The sign of the thermoelectric effect also indicates $p$-type conduction. STM and STS measurements demonstrate that the chemical potential is always located inside the bulk band gap. We also observed changes in the local density of states in the vicinity of the quintuple layer steps at the studied surface. This changes correspond either to the shift of the Dirac cone position or to the shift of the chemical potential near the step edge.

DOI: https://doi.org/10.7868/S0370274X1418009X

Full text: PDF file (1103 kB)
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English version:
Journal of Experimental and Theoretical Physics Letters, 2014, 100:6, 398–402

Bibliographic databases:

Received: 14.08.2014
Language:

Citation: A. Yu. Dmitriev, N. I. Fedotov, V. F. Nasretdinova, S. V. Zaitsev-Zotov, “Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:6 (2014), 442–446; JETP Letters, 100:6 (2014), 398–402

Citation in format AMSBIB
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\paper Effect of surface defects and few-atomic steps on the local density of
states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2014
\vol 100
\issue 6
\pages 442--446
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\crossref{https://doi.org/10.7868/S0370274X1418009X}
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\transl
\jour JETP Letters
\yr 2014
\vol 100
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\pages 398--402
\crossref{https://doi.org/10.1134/S0021364014180039}
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    This publication is cited in the following articles:
    1. Dai J., West D., Wang X., Wang Ya., Kwok D., Cheong S.-W., Zhang S.B., Wu W., Phys. Rev. Lett., 117:10 (2016), 106401  crossref  isi  elib  scopus
    2. Y. Xu, J. Chiu, L. Miao, H. He, Zh. Alpichshev, A. Kapitulnik, R. R. Biswas, L. A. Wray, Nat. Commun., 8 (2017), 14081  crossref  isi  scopus
    3. N. I. Fedotov, S. V. Zaitsev-Zotov, Phys. Rev. B, 95:15 (2017), 155403  crossref  isi  scopus
    4. L. N. Lukyanova, I. V. Makarenko, O. A. Usov, P. A. Dementev, Semicond. Sci. Technol., 33:5 (2018), 055001  crossref  isi  scopus
    5. Y. Xu, G. Jiang, J. Chiu, L. Miao, E. Kotta, Yu. Zhang, R. R. Biswas, L. A. Wray, New J. Phys., 20 (2018), 073014  crossref  isi  scopus
    6. Fedotov N., Zaitsev-Zotov S., Phys. Status Solidi-Rapid Res. Lett., 13:5 (2019), 1800617  crossref  isi
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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