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Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 6, Pages 442–446 (Mi jetpl4128)  

This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$

A. Yu. Dmitrievab, N. I. Fedotovab, V. F. Nasretdinovab, S. V. Zaitsev-Zotovba

a Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow

Abstract: The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new subsurface defects whose location and charge correspond to $p$-type conduction of grown crystals. The sign of the thermoelectric effect also indicates $p$-type conduction. STM and STS measurements demonstrate that the chemical potential is always located inside the bulk band gap. We also observed changes in the local density of states in the vicinity of the quintuple layer steps at the studied surface. This changes correspond either to the shift of the Dirac cone position or to the shift of the chemical potential near the step edge.

DOI: https://doi.org/10.7868/S0370274X1418009X

Full text: PDF file (1103 kB)
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English version:
Journal of Experimental and Theoretical Physics Letters, 2014, 100:6, 398–402

Bibliographic databases:

Document Type: Article
Received: 14.08.2014
Language: English

Citation: A. Yu. Dmitriev, N. I. Fedotov, V. F. Nasretdinova, S. V. Zaitsev-Zotov, “Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:6 (2014), 442–446; JETP Letters, 100:6 (2014), 398–402

Citation in format AMSBIB
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\paper Effect of surface defects and few-atomic steps on the local density of
states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
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\vol 100
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\pages 442--446
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\crossref{https://doi.org/10.7868/S0370274X1418009X}
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\jour JETP Letters
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\crossref{https://doi.org/10.1134/S0021364014180039}
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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Dai J., West D., Wang X., Wang Ya., Kwok D., Cheong S.-W., Zhang S.B., Wu W., Phys. Rev. Lett., 117:10 (2016), 106401  crossref  isi  elib  scopus
    2. Y. Xu, J. Chiu, L. Miao, H. He, Zh. Alpichshev, A. Kapitulnik, R. R. Biswas, L. A. Wray, “Disorder enabled band structure engineering of a topological insulator surface”, Nat. Commun., 8 (2017), 14081  crossref  isi  scopus
    3. N. I. Fedotov, S. V. Zaitsev-Zotov, “Experimental Search For One-Dimensional Edge States At Surface Steps of the Topological Insulator Bi2Se3: Distinguishing Between Effects and Artifacts”, Phys. Rev. B, 95:15 (2017), 155403  crossref  isi  scopus
    4. Lukyanova L.N., Makarenko I.V., Usov O.A., Dementev P.A., “Scanning Tunneling Spectroscopy of the Surface States of Dirac Fermions in Thermoelectrics Based on Bismuth Telluride”, Semicond. Sci. Technol., 33:5 (2018), 055001  crossref  isi  scopus
    5. Xu Y., Jiang G., Chiu J., Miao L., Kotta E., Zhang Yu., Biswas R.R., Wray L.A., “Connection Topology of Step Edge State Bands At the Surface of a Three Dimensional Topological Insulator”, New J. Phys., 20 (2018), 073014  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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