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Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 89, Issue 11, Pages 681–684 (Mi jetpl446)  

This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Emission dynamics of a GaAs microcavity with embedded quantum wells under intense nonresonant excitation

V. V. Belykh, Nguyen Manh Hung, N. N. Sibel'din, M. L. Skorikov, V. A. Tsvetkov, A. V. Sharkov

P. N. Lebedev Physical Institute, Russian Academy of Sciences

Abstract: In a GaAs-based microcavity with embedded quantum wells, the dynamics of emission processes under high levels of nonresonant picosecond laser-pulse excitation is studied. For pump levels above the stimulation threshold, the kinetics of the intensity, spectral position, and linewidth of the emission are measured. Upon the arrival of an excitation pulse, the emission line shifts to higher energies over a time interval comparable to the time it takes for the emission intensity to attain its peak value, and then shifts in the opposite direction towards its position at low polariton densities. The width of the emission line is largest immediately after the excitation pulse and attains a minimum when the stimulated-emission intensity is maximum. It is shown that after the excitation pulse, the system is initially in a weak exciton-photon coupling regime, and a transition to a strong-coupling regime occurs with time.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2009, 89:11, 579–582

Bibliographic databases:

PACS: 71.36.+c, 78.47.+p, 78.45.+h
Received: 04.05.2009

Citation: V. V. Belykh, Nguyen Manh Hung, N. N. Sibel'din, M. L. Skorikov, V. A. Tsvetkov, A. V. Sharkov, “Emission dynamics of a GaAs microcavity with embedded quantum wells under intense nonresonant excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:11 (2009), 681–684; JETP Letters, 89:11 (2009), 579–582

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Bilykh V.V., Nguyen M.H., Sibeldin N.N., Skorikov M.L., Tsvetkov V.A., Sharkov A.V., “Dynamics of the transition from strong to weak coupling regime in a system of exciton polaritons in semiconductor microcavities”, Journal of Experimental and Theoretical Physics, 109:3 (2009), 472–479  crossref  adsnasa  isi  scopus
    2. Belykh V.V., Tsvetkov V.A., Skorikov M.L., Sibeldin N.N., “Nonlinear emission dynamics of a GaAs microcavity with embedded quantum wells”, Journal of Physics: Condensed Matter, 23:21 (2011), 215302  crossref  adsnasa  isi  scopus
    3. Tempel J.-S., Veit F., Assmann M., Kreilkamp L.E., Rahimi-Iman A., Loeffler A., Hoefling S., Reitzenstein S., Worschech L., Forchel A., Bayer M., “Characterization of two-threshold behavior of the emission from a GaAs microcavity”, Physical Review B, 85:7 (2012), 075318  crossref  adsnasa  isi  elib  scopus
    4. Belykh V.V., Mylnikov D.A., Sibeldin N.N., “Dynamics of the Transition From Weak to Strong Exciton-Photon Coupling Regime in a Gaas Microcavity: Angle Resolved Measurements”, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, No 5, Physica Status Solidi C-Current Topics in Solid State Physics, 9, no. 5, ed. Swietlik R., Wiley-V C H Verlag Gmbh, 2012, 1230–1235  crossref  isi  scopus
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