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Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 12, Pages 876–880 (Mi jetpl4495)  

This article is cited in 4 scientific papers (total in 4 papers)

OPTICS AND NUCLEAR PHYSICS

Terahertz intracenter photoluminescence of silicon with lithium at interband excitation

A. V. Andrianova, A. O. Zahar'ina, R. Kh. Zhukavinb, V. N. Shastincb, N. V. Abrosimovd, A. V. Bobylevea

a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c N. I. Lobachevski State University of Nizhni Novgorod
d Leibniz-Institut für Kristallzüchtung
e Saint-Petersburg State Polytechnical University

Abstract: Terahertz radiation has been revealed at interband photoexcitation of lithium-doped silicon crystals at liquid helium temperatures. It has been shown that the lines caused by optical transitions of electrons from the $2P$ excited states of lithium centers to the $1S(A_1)$ state of the impurity prevail in the radiation spectrum. The strong suppression of terahertz radiation associated with transitions to the lowest state of the donor $1S(E+T_2)$ as compared to radiation associated with transitions to the $1S(A_1)$ state is explained by the reabsorption of radiation. The radiation spectrum also includes weaker terahertz lines, which can be attributed to the intracenter transitions in donors that are caused by Li-O complexes. The radiation spectrum also exhibits lines at ${\sim} 12.7$ and ${\sim} 15.3 $meV, which are possibly due to intraexcitonic radiative transitions and transitions from continuum to the ground state of excitons.

DOI: https://doi.org/10.7868/S0370274X14240035

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English version:
Journal of Experimental and Theoretical Physics Letters, 2014, 100:12, 771–775

Bibliographic databases:

Document Type: Article
Received: 29.10.2014

Citation: A. V. Andrianov, A. O. Zahar'in, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, A. V. Bobylev, “Terahertz intracenter photoluminescence of silicon with lithium at interband excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 876–880; JETP Letters, 100:12 (2014), 771–775

Citation in format AMSBIB
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\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2014
\vol 100
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\pages 876--880
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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Andrianov A.V., Zakhar'in A.O., Zhukavin R.Kh., Shastin V.N., Shengurov D.V., Abrosimov N.V., “Terahertz emission at impurity electrical breakdown in Si(Li)”, Tech. Phys. Lett., 42:10 (2016), 1031–1033  crossref  isi  scopus
    2. A. O. Zakhar'in, Yu. B. Vasilyev, N. A. Sobolev, V. V. Zabrodskii, S. V. Egorov, A. V. Andrianov, “Injection-Induced Terahertz Electroluminescence From Silicon P-N Structures”, Semiconductors, 51:5 (2017), 604–607  crossref  isi  scopus
    3. Andrianov A.V., Zakhar'in A.O., “Intrinsic Terahertz Photoluminescence From Semiconductors”, Appl. Phys. Lett., 112:4 (2018), 041101  crossref  isi  scopus
    4. A. V. Andrianov, A. O. Zakhar'in, A. G. Petrov, “Intraexciton and intracenter terahertz radiation from doped silicon under interband photoexcitation”, JETP Letters, 107:9 (2018), 540–543  mathnet  crossref  crossref  isi
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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