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Pis'ma v Zh. Èksper. Teoret. Fiz., 2015, Volume 101, Issue 1, Pages 24–28 (Mi jetpl4513)  

This article is cited in 1 scientific paper (total in 1 paper)

CONDENSED MATTER

Conductance through chains of Ge/Si quantum dots: crossover from one-dimensional to quasi-one-dimensional hopping

N. P. Stepinaa, V. V. Valkovskiiba, Yu. M. Гальперинcd, Zh. V. Smaginaa, A. V. Dvurechenskiiab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Department of Physics and Center for Advanced Materials & Nanotechnology, University of Oslo
d Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Abstract: Parallel chains of germanium quantum dots were grown on a patterned silicon (100) substrate prepared by the combination of nanoimprint lithography and ion irradiation. Strong anisotropy of the conductance between the direction of the chains and the perpendicular one was observed; the current-voltage curves being essentially superlinear. At low bias voltage dependence of the conductance obeys the Arrhenius law indicating one-dimensional (1D) hopping. With increase of the bias this dependence crosses over to $G\propto \exp [-(T_0/T)^{1/2}]$ explained by a quasi-1D transport involving hopping between nearest neighboring chains.

DOI: https://doi.org/10.7868/S0370274X15010051

Full text: PDF file (1872 kB)
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English version:
Journal of Experimental and Theoretical Physics Letters, 2015, 101:1, 22–26

Bibliographic databases:

Received: 10.11.2014
Revised: 17.11.2014
Language:

Citation: N. P. Stepina, V. V. Valkovskii, Yu. M. Гальперин, Zh. V. Smagina, A. V. Dvurechenskii, “Conductance through chains of Ge/Si quantum dots: crossover from one-dimensional to quasi-one-dimensional hopping”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:1 (2015), 24–28; JETP Letters, 101:1 (2015), 22–26

Citation in format AMSBIB
\Bibitem{SteValGal15}
\by N.~P.~Stepina, V.~V.~Valkovskii, Yu.~M.~Гальперин, Zh.~V.~Smagina, A.~V.~Dvurechenskii
\paper Conductance through chains of Ge/Si quantum dots: crossover from
one-dimensional to quasi-one-dimensional hopping
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2015
\vol 101
\issue 1
\pages 24--28
\mathnet{http://mi.mathnet.ru/jetpl4513}
\crossref{https://doi.org/10.7868/S0370274X15010051}
\elib{http://elibrary.ru/item.asp?id=23218341}
\transl
\jour JETP Letters
\yr 2015
\vol 101
\issue 1
\pages 22--26
\crossref{https://doi.org/10.1134/S0021364015010142}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000351661700005}
\elib{http://elibrary.ru/item.asp?id=23993655}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84938080201}


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    This publication is cited in the following articles:
    1. JETP Letters, 102:2 (2015), 108–112  mathnet  crossref  crossref  isi  elib  elib
  • Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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