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Pis'ma v Zh. Èksper. Teoret. Fiz., 2018, Volume 107, Issue 4, Pages 248–251 (Mi jetpl5503)  

This article is cited in 1 scientific paper (total in 1 paper)

CONDENSED MATTER

Quantum well on the $n$-GaAs surface irradiated by argon ions

V. M. Mikoushkin

Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia

Abstract: The density of states of the valence band of a $p$-GaAs layer formed on an $n$-GaAs surface owing to the bombardment by $2500$-eV Ar$^+$ ions has been studied by photoelectron spectroscopy. A number of peaks have been detected in the spectrum of the edge of the valence band in the binding energy range $E_{\mathrm{V}}< 1.2$ eV. Their number and energy positions correspond to the quantum confinement levels calculated for a hole quantum well on the surface with the width about the ion penetration depth $R_{\mathrm{p}}=3.6$ nm. Electronic transitions from these levels to the bottom of the conduction band have been revealed in the spectrum of characteristic energy losses of electrons reflected from the surface. Thus, it has been shown that the action of the argon ion beam on $n$-GaAs results in the formation of a quantum well on the surface.

Funding Agency Grant Number
Russian Foundation for Basic Research 16-02-00665_a


DOI: https://doi.org/10.7868/S0370274X18040082

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English version:
Journal of Experimental and Theoretical Physics Letters, 2018, 107:4, 243–246

Bibliographic databases:

Document Type: Article
Received: 26.12.2017

Citation: V. M. Mikoushkin, “Quantum well on the $n$-GaAs surface irradiated by argon ions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:4 (2018), 248–251; JETP Letters, 107:4 (2018), 243–246

Citation in format AMSBIB
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\paper Quantum well on the $n$-GaAs surface irradiated by argon ions
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2018
\vol 107
\issue 4
\pages 248--251
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\crossref{https://doi.org/10.7868/S0370274X18040082}
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\transl
\jour JETP Letters
\yr 2018
\vol 107
\issue 4
\pages 243--246
\crossref{https://doi.org/10.1134/S0021364018040094}
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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Mikoushkin V.M., “<Bold>in Situ Bandgap Determination of the Gaasn Nanolayer Prepared By Low-Energy Ion Implantation</Bold>”, Semiconductors, 52:16 (2018), 2061–2064  crossref  isi  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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