RUS  ENG JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PERSONAL OFFICE
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pis'ma v Zh. Èksper. Teoret. Fiz., 2018, Volume 107, Issue 10, Pages 679–683 (Mi jetpl5581)  

CONDENSED MATTER

Rearrangement of the structure of paratellurite crystals in a near-surface layer caused by the migration of charge carriers in an external electric field

A. G. Kulikovab, A. E. Blagovab, N. V. Marchenkovab, V. A. Lomonova, A. V. Vinogradova, Yu. V. Pisarevskyab, M. V. Kovalchukab

a Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
b National Research Center Kurchatov Institute, Moscow, Russia

Abstract: The process of formation of surface structures in a paratellurite crystal ($\alpha$-$_2$) in an external electric field has been studied by in situ X-ray diffraction (XRD) measurements. This process is reversible and its dynamics (duration of tens of minutes) corresponds to the formation of a screening layer near the insulator-metal interface owing to the counter migration of oxygen ions and vacancies in the external electric field. The formation of domains has been observed in the experiment as the broadening and splitting of the XRD curve and is explained by mechanical stresses that appear in the high electric field near the surface in view of the piezoelectric effect and are responsible for a ferroelectric $\alpha-\beta$ phase transition. A change in the lattice parameter near the anode (surface of the crystal with a positive external charge) has been detected simultaneously. This change is due to the local rearrangement of the crystal structure because of the inflow of oxygen ions in this region and outflow of oxygen vacancies.

Funding Agency Grant Number
Russian Academy of Sciences - Federal Agency for Scientific Organizations 007-/3363/26
Russian Foundation for Basic Research 16-32-60045___
16-29-14057__


DOI: https://doi.org/10.7868/S0370274X18100119

Full text: PDF file (757 kB)
First page: PDF file
References: PDF file   HTML file

English version:
Journal of Experimental and Theoretical Physics Letters, 2018, 107:10, 646–650

Bibliographic databases:

Document Type: Article
Received: 05.03.2018
Revised: 09.04.2018

Citation: A. G. Kulikov, A. E. Blagov, N. V. Marchenkov, V. A. Lomonov, A. V. Vinogradov, Yu. V. Pisarevsky, M. V. Kovalchuk, “Rearrangement of the structure of paratellurite crystals in a near-surface layer caused by the migration of charge carriers in an external electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:10 (2018), 679–683; JETP Letters, 107:10 (2018), 646–650

Citation in format AMSBIB
\Bibitem{KulBlaMar18}
\by A.~G.~Kulikov, A.~E.~Blagov, N.~V.~Marchenkov, V.~A.~Lomonov, A.~V.~Vinogradov, Yu.~V.~Pisarevsky, M.~V.~Kovalchuk
\paper Rearrangement of the structure of paratellurite crystals in a near-surface layer caused by the migration of charge carriers in an external electric field
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2018
\vol 107
\issue 10
\pages 679--683
\mathnet{http://mi.mathnet.ru/jetpl5581}
\crossref{https://doi.org/10.7868/S0370274X18100119}
\transl
\jour JETP Letters
\yr 2018
\vol 107
\issue 10
\pages 646--650
\crossref{https://doi.org/10.1134/S0021364018100120}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000440151700011}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85050554349}


Linking options:
  • http://mi.mathnet.ru/eng/jetpl5581
  • http://mi.mathnet.ru/eng/jetpl/v107/i10/p679

    SHARE: VKontakte.ru FaceBook Twitter Mail.ru Livejournal Memori.ru


    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
    Number of views:
    This page:24
    References:3
    First page:2

     
    Contact us:
     Terms of Use  Registration  Logotypes © Steklov Mathematical Institute RAS, 2018