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Pis'ma v Zh. Èksper. Teoret. Fiz., 2019, Volume 109, Issue 12, Pages 833–834 (Mi jetpl5933)  

CONDENSED MATTER

Dimension effects in insulating NbTiN disordered films and asymptotic freedom of Cooper pairs

M. V. Burdastyhab, S. V. Postolovabc, I. A. Derbezovb, A. Gaislerb, M. C. Diamantinid, C. A. Trugenbergere, V. M. Vinokurf, A. Yu. Mironovab

a Novosibirsk State University, 630090 Novosibirsk, Russia
b A. V. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
c Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
d Noise in Physical Systems Laboratory, Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica e Geologia, University of Perugia, I-06100 Perugia, Italy
e SwissScientific Technologies SA, CH-1204 Geneva, Switzerland
f Materials Science Division, Argonne National Laboratory, Argonne, 60637 Illinois, USA

Funding Agency Grant Number
Russian Science Foundation 18-72-10056
U.S. Department of Energy
The work on transport measurements at Novosibirsk is supported by Russian Science Foundation # 18-72-10056. Analysis of the experimental data (V. M. Vinokur) are supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.


DOI: https://doi.org/10.1134/S0370274X19120063

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English version:
Journal of Experimental and Theoretical Physics Letters, 2019, 109:12, 795–798

Bibliographic databases:

Received: 24.04.2019
Revised: 02.05.2019
Accepted:04.05.2019
Language:

Citation: M. V. Burdastyh, S. V. Postolova, I. A. Derbezov, A. Gaisler, M. C. Diamantini, C. A. Trugenberger, V. M. Vinokur, A. Yu. Mironov, “Dimension effects in insulating NbTiN disordered films and asymptotic freedom of Cooper pairs”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:12 (2019), 833–834; JETP Letters, 109:12 (2019), 795–798

Citation in format AMSBIB
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\paper Dimension effects in insulating NbTiN disordered films and asymptotic freedom of Cooper pairs
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
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\vol 109
\issue 12
\pages 833--834
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