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Pis'ma v Zh. Èksper. Teoret. Fiz., 2020, Volume 111, Issue 5, Pages 301–302 (Mi jetpl6121)  

OPTICS AND NUCLEAR PHYSICS

Microstructural characterization of V-defects in InGaN/GaN multiquantum wells

H. Wanga, G. Jina, Q. Tanba

a Academy of Electronic Information and Electrical Engineering, Xiangnan University Chenzhou, 423000, China
b Institute of Physics and Information Science, Hunan Normal University, Changsha, 410081, China

DOI: https://doi.org/10.31857/S0370274X20050045

Full text: PDF file (131 kB)
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English version:
DOI: https://doi.org/10.1134/S0021364020050021

Received: 27.12.2019
Revised: 02.02.2020
Accepted:02.02.2020
Language:

Citation: H. Wang, G. Jin, Q. Tan, “Microstructural characterization of V-defects in InGaN/GaN multiquantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:5 (2020), 301–302

Citation in format AMSBIB
\Bibitem{WanJinTan20}
\by H.~Wang, G.~Jin, Q.~Tan
\paper Microstructural characterization of V-defects in InGaN/GaN multiquantum wells
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2020
\vol 111
\issue 5
\pages 301--302
\mathnet{http://mi.mathnet.ru/jetpl6121}
\crossref{https://doi.org/10.31857/S0370274X20050045}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85081280300}


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  • Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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