RUS  ENG JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pis'ma v Zh. Èksper. Teoret. Fiz., 2010, Volume 91, Issue 9, Pages 511–516 (Mi jetpl711)  

This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Reconstruction dependence of the etching and passivation of the GaAs(001) surface

O. E. Tereshchenkoab, S. V. Eremeevcd, A. V. Bakulinc, S. E. Kul'kovadc

a Institute of Semiconductor Physics of SB RAS
b Novosibirsk State University
c Tomsk State University
d Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences

Abstract: The microscopic nature of the selective interaction of iodine with an As- and Ga-stabilized GaAs(001) surface has been investigated by the photoelectron emission and ab initio calculations. The adsorption of iodine on the Ga-stabilized (4 × 2)/c(8 × 2) surface leads to the formation of the prevailing chemical bond with gallium atoms; to a significant redistribution of the electron density between the surface Ga and As atoms; and, as a result, to a decrease in their binding energy. Iodine on the As-stabilized (2 × 4)/c(2 × 8) surface forms a bond predominantly with surface arsenic atoms. Such a selective interaction of iodine with the reconstructed surfaces gives rise to the etching of the Ga-stabilized surface and the passivation of the As-stabilized surface; this explains the layer-by-layer (“digital”) etching of GaAs(001) controlled by the reconstruction transitions on this surface.

Full text: PDF file (919 kB)
References: PDF file   HTML file

English version:
Journal of Experimental and Theoretical Physics Letters, 2010, 91:9, 466–470

Bibliographic databases:

Received: 25.03.2010

Citation: O. E. Tereshchenko, S. V. Eremeev, A. V. Bakulin, S. E. Kul'kova, “Reconstruction dependence of the etching and passivation of the GaAs(001) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010), 511–516; JETP Letters, 91:9 (2010), 466–470

Linking options:
  • http://mi.mathnet.ru/eng/jetpl711
  • http://mi.mathnet.ru/eng/jetpl/v91/i9/p511

    SHARE: VKontakte.ru FaceBook Twitter Mail.ru Livejournal Memori.ru


    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Bakulin A. Eremeev S. Tereshchenko O. Chulkov E. Kulkova S., Annual Conference on Functional Materials and Nanotechnologies - Fm&Nt 2011, IOP Conference Series-Materials Science and Engineering, 23, ed. Sternberg A. Muzikante I. Zicans J., IOP Publishing Ltd, 2011, 012015  crossref  isi  scopus
    2. Tian Sh., Wei Zh., Li Y., Zhao H., Fang X., Tang J., Fang D., Sun L., Liu G., Yao B., Ma X., Mater. Sci. Semicond. Process, 17 (2014), 33–37  crossref  isi  scopus
    3. Bakulin A., Ponomarev A., Kulkova S., 12Th Russia/Cis/Baltic/Japan Symposium on Ferroelectricity and 9Th International Conference on Functional Materials and Nanotechnologies (Rcbjsf-2014-Fm&Nt), IOP Conference Series-Materials Science and Engineering, 77, IOP Publishing Ltd, 2015, 012004  crossref  isi  scopus
    4. Bakulin A.V., Kulkova S.E., Semiconductors, 50:2 (2016), 171–179  crossref  mathscinet  isi  elib  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
    Number of views:
    This page:235
    Full text:79
    References:24

     
    Contact us:
     Terms of Use  Registration  Logotypes © Steklov Mathematical Institute RAS, 2019