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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Reconstruction dependence of the etching and passivation of the GaAs(001) surface
O. E. Tereshchenkoab, S. V. Eremeevcd, A. V. Bakulinc, S. E. Kul'kovadc a Institute of Semiconductor Physics of SB RAS
b Novosibirsk State University
c Tomsk State University
d Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
Abstract:
The microscopic nature of the selective interaction of iodine with an As- and Ga-stabilized GaAs(001) surface has been investigated by the photoelectron emission and ab initio calculations. The adsorption of iodine on the Ga-stabilized (4 × 2)/c(8 × 2) surface leads to the formation of the prevailing chemical bond with gallium atoms; to a significant redistribution of the electron density between the surface Ga and As atoms; and, as a result, to a decrease in their binding energy. Iodine on the As-stabilized (2 × 4)/c(2 × 8) surface forms a bond predominantly with surface arsenic atoms. Such a selective interaction of iodine with the reconstructed surfaces gives rise to the etching of the Ga-stabilized surface and the passivation of the As-stabilized surface; this explains the layer-by-layer (“digital”) etching of GaAs(001) controlled by the reconstruction transitions on this surface.
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Journal of Experimental and Theoretical Physics Letters, 2010, 91:9, 466–470
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Received: 25.03.2010
Citation:
O. E. Tereshchenko, S. V. Eremeev, A. V. Bakulin, S. E. Kul'kova, “Reconstruction dependence of the etching and passivation of the GaAs(001) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010), 511–516; JETP Letters, 91:9 (2010), 466–470
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http://mi.mathnet.ru/eng/jetpl711 http://mi.mathnet.ru/eng/jetpl/v91/i9/p511
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This publication is cited in the following articles:
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Bakulin A. Eremeev S. Tereshchenko O. Chulkov E. Kulkova S., Annual Conference on Functional Materials and Nanotechnologies - Fm&Nt 2011, IOP Conference Series-Materials Science and Engineering, 23, ed. Sternberg A. Muzikante I. Zicans J., IOP Publishing Ltd, 2011, 012015
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Tian Sh., Wei Zh., Li Y., Zhao H., Fang X., Tang J., Fang D., Sun L., Liu G., Yao B., Ma X., Mater. Sci. Semicond. Process, 17 (2014), 33–37
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Bakulin A., Ponomarev A., Kulkova S., 12Th Russia/Cis/Baltic/Japan Symposium on Ferroelectricity and 9Th International Conference on Functional Materials and Nanotechnologies (Rcbjsf-2014-Fm&Nt), IOP Conference Series-Materials Science and Engineering, 77, IOP Publishing Ltd, 2015, 012004
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Bakulin A.V., Kulkova S.E., Semiconductors, 50:2 (2016), 171–179
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