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Pis'ma v Zh. Èksper. Teoret. Fiz., 2008, Volume 87, Issue 1, Pages 41–44 (Mi jetpl9)  

This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Reversible superstructural transitions on the GaAs(001) surface under the selective effect of iodine and cesium

O. E. Tereshchenkoab, K. V. Toropetskiyab, V. L. Alperovichab

a Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia
b Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrenteva 13, Novosibirsk, 630090, Russia

Abstract: The selective interaction of the iodine and cesium atoms with the GaAs(001) surface, which leads to a decrease in the bond energy of the Ga and As surface atoms, respectively, owing to the redistribution of the electron density in the near-surface region under the effect of electronegative and electropositive adsorbates, has been experimentally investigated. This selective interaction makes it possible to remove alternately the Ga and As monolayers in the iodine and cesium adsorption followed by heating at $T\le450^\circ$C and, thus, to implement reversible low-temperature transitions between the Ga-and As-stabilized superstructures, as well as the atomic layer etching of the semiconductor with the physically ultimate monolayer accuracy.

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English version:
Journal of Experimental and Theoretical Physics Letters, 2008, 87:1, 35–38

Bibliographic databases:

Document Type: Article
PACS: 61.14.-x, 68.35.Bs, 68.43.-h, 72.80.Ey, 81.15.Ef
Received: 15.11.2007

Citation: O. E. Tereshchenko, K. V. Toropetskiy, V. L. Alperovich, “Reversible superstructural transitions on the GaAs(001) surface under the selective effect of iodine and cesium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:1 (2008), 41–44; JETP Letters, 87:1 (2008), 35–38

Citation in format AMSBIB
\Bibitem{TerTorAlp08}
\by O.~E.~Tereshchenko, K.~V.~Toropetskiy, V.~L.~Alperovich
\paper Reversible superstructural transitions on the GaAs(001) surface under the selective effect of iodine and cesium
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2008
\vol 87
\issue 1
\pages 41--44
\mathnet{http://mi.mathnet.ru/jetpl9}
\transl
\jour JETP Letters
\yr 2008
\vol 87
\issue 1
\pages 35--38
\crossref{https://doi.org/10.1007/s11448-008-1009-5}
\isi{http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&DestLinkType=FullRecord&DestApp=ALL_WOS&KeyUT=000254702000009}
\scopus{http://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-41749113040}


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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. JETP Letters, 91:9 (2010), 466–470  mathnet  crossref  isi
    2. Bakulin A.V., Eremeev S.V., Tereshchenko O.E., Kulkova S.E., “Chlorine Adsorption on the InAs (001) Surface”, Semiconductors, 45:1 (2011), 21–29  crossref  adsnasa  isi  elib  scopus
    3. Bakulin A., Eremeev S., Tereshchenko O., Chulkov E., Kulkova S., “Adsorption of Halogen Atom (F, Cl, I) on Cation-Rich Gaas(001) Surface”, Annual Conference on Functional Materials and Nanotechnologies - Fm&Nt 2011, IOP Conference Series-Materials Science and Engineering, 23, eds. Sternberg A., Muzikante I., Zicans J., IOP Publishing Ltd, 2011, 012015  crossref  isi  scopus
    4. Tereshchenko O.E. Paget D. Toropetsky K.V. Alperovich V.L. Eremeev S.V. Bakulin A.V. Kulkova S.E. Doyle B.P. Nannarone S., “Etching Or Stabilization of Gaas(001) Under Alkali and Halogen Adsorption”, J. Phys. Chem. C, 116:15 (2012), 8535–8540  crossref  isi  elib  scopus
  •       Pis'ma v Zhurnal ksperimental'noi i Teoreticheskoi Fiziki
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