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PFMT, 2012, Issue 3(12), Pages 37–40 (Mi pfmt57)  

This article is cited in 1 scientific paper (total in 1 paper)

PHYSICS

Process research of laser splitting silicon wafers cutout in the plane (110)

A. N. Serdyukov, S. V. Shalupaev, Yu. V. Nikitjuk, A. A. Sereda

F. Scorina Gomel State University, Gomel

Abstract: Results of laser thermosplitting process modelling of single-crystalline silicon are presented. Calculation of the thermoelastic fields formed in a silicon plate as a result of consecutive laser heating and coolant influence was carried out for a section (110) in three different variants of laser beam movement, namely in directions [1–10], [001], [1–11].

Keywords: crack, laser splitting, silicon wafer

Full text: PDF file (402 kB)
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UDC: 621.373.826
Received: 05.06.2012

Citation: A. N. Serdyukov, S. V. Shalupaev, Yu. V. Nikitjuk, A. A. Sereda, “Process research of laser splitting silicon wafers cutout in the plane (110)”, PFMT, 2012, no. 3(12), 37–40

Citation in format AMSBIB
\Bibitem{SerShaNik12}
\by A.~N.~Serdyukov, S.~V.~Shalupaev, Yu.~V.~Nikitjuk, A.~A.~Sereda
\paper Process research of laser splitting silicon wafers cutout in the plane (110)
\jour PFMT
\yr 2012
\issue 3(12)
\pages 37--40
\mathnet{http://mi.mathnet.ru/pfmt57}


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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. S. V. Shalupaev, Yu. V. Nikityuk, A. A. Sereda, “Lazernoe termoraskalyvanie sapfira puchkami serpovidnoi formy”, PFMT, 2018, no. 3(36), 49–54  mathnet
  • Проблемы физики, математики и техники
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