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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 2, Pages 270–274 (Mi phts1604)  

Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

P. S. Kop'ev, B. Ya. Ber, S. V. Ivanov, N. N. Ledentsov, B. Ya. Mel'tser, V. M. Ustinov

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad

Full text: PDF file (632 kB)
UDC: 621.315.592
Received: 09.08.1983
Accepted:29.08.1983

Citation: P. S. Kop'ev, B. Ya. Ber, S. V. Ivanov, N. N. Ledentsov, B. Ya. Mel'tser, V. M. Ustinov, “Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 270–274

Citation in format AMSBIB
\Bibitem{KopBerIva84}
\by P.~S.~Kop'ev, B.~Ya.~Ber, S.~V.~Ivanov, N.~N.~Ledentsov, B.~Ya.~Mel'tser, V.~M.~Ustinov
\paper Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 2
\pages 270--274
\mathnet{http://mi.mathnet.ru/phts1604}


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