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Kvantovaya Elektronika, 1998, Volume 25, Number 3, Pages 233–235 (Mi qe1168)  

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Growth and luminescence of epitaxial Yb0.3ErxGd2.7–xGa5O12 films

V. V. Randoshkin, A. M. Belovolov, M. I. Belovolov, N. V. Vasil'eva, E. M. Dianov, K. V. Stashun, M. I. Timoshechkin

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: A series of (Gd,Yb,Er)3Ga5O12 films with a variable Er content was grown on Gd3Ga5O12 substrates with the (111) orientation by liquid-phase epitaxy from a supercooled PbO — B2O3 melt. Variation of the film growth from sample to sample, grown under the same conditions, was explained by degradation of the molten solution. The violet colour of the first film of the series was attributed to enhanced capture, from the molten solution, of lead and platinum impurity ions and also to characteristics of charge compensation of these ions at high growth rates. Blue — green luminescence was observed for films with erbium content in excess of 0.01 at.%.

Full text: PDF file (172 kB)

English version:
Quantum Electronics, 1998, 28:3, 225–227

Bibliographic databases:

PACS: 81.15.Lm, 78.55.Hx, 78.66.Nk
Received: 17.07.1997

Citation: V. V. Randoshkin, A. M. Belovolov, M. I. Belovolov, N. V. Vasil'eva, E. M. Dianov, K. V. Stashun, M. I. Timoshechkin, “Growth and luminescence of epitaxial Yb0.3ErxGd2.7–xGa5O12 films”, Kvantovaya Elektronika, 25:3 (1998), 233–235 [Quantum Electron., 28:3 (1998), 225–227]

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