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Kvantovaya Elektronika, 1975, Volume 2, Number 12, Pages 2624–2626 (Mi qe12167)  

Brief Communications

Pulse avalanche photodetector based on a metal-insulator-semiconductor structure

N. I. Gol'braikh, A. F. Plotnikov, V. È. Shubin


Abstract: An investigation was made of avalanche multiplication of carriers in the surface region of a metal–insulator–semiconductor (MIS) structure. Transient photocurrents resulting from such multiplication were observed in a surface layer of silicon in an Au–SiO2–Si structure. The results obtained indicated that avalanche multiplication of carriers in MIS structures could be used for detection of light.

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English version:
Soviet Journal of Quantum Electronics, 1975, 5:12, 1435–1436

UDC: 621.383.4
PACS: 42.75.Ng, 85.60.Gz
Received: 12.02.1975
Revised: 01.09.1975

Citation: N. I. Gol'braikh, A. F. Plotnikov, V. È. Shubin, “Pulse avalanche photodetector based on a metal-insulator-semiconductor structure”, Kvantovaya Elektronika, 2:12 (1975), 2624–2626 [Sov J Quantum Electron, 5:12 (1975), 1435–1436]

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  • http://mi.mathnet.ru/eng/qe/v2/i12/p2624

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