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Kvantovaya Elektronika, 1977, Volume 4, Number 9, Pages 2007–2009 (Mi qe12819)  

Brief Communications

Integrated-optics functional elements based on epitaxial GaAlAs-GaAs heterostructures

Yu. A. Bykovskiĭ, Yu. P. Zakharov, A. V. Makovkin, V. K. Malyshev, V. I. Molochev, V. L. Smirnov, O. N. Talenskiĭ, A. V. Shmal'ko


Abstract: An investigation was made of active integrated-optics devices based on epitaxial GaAlAs-GaAs heterostructures sharing a common GaAs substrate. The results demonstrated a possibility of multifunctional use of GaAlAs heterostructure elements. An integrated-optics optron was constructed and the main parameters and characteristics were determined for a unit operating under various conditions.

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English version:
Soviet Journal of Quantum Electronics, 1977, 7:9, 1144–1145

UDC: 621.373.826:621.396
PACS: 42.82.+n, 73.40.Lq
Received: 01.02.1977

Citation: Yu. A. Bykovskiĭ, Yu. P. Zakharov, A. V. Makovkin, V. K. Malyshev, V. I. Molochev, V. L. Smirnov, O. N. Talenskiĭ, A. V. Shmal'ko, “Integrated-optics functional elements based on epitaxial GaAlAs-GaAs heterostructures”, Kvantovaya Elektronika, 4:9 (1977), 2007–2009 [Sov J Quantum Electron, 7:9 (1977), 1144–1145]

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  • Квантовая электроника Quantum Electronics
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