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Kvantovaya Elektronika, 1977, Volume 4, Number 9, Pages 2038–2039 (Mi qe12832)  

Brief Communications

Continuously tunable electron-beam-pumped semiconductor laser

A. N. Vlasov, G. S. Kozina, T. A. Kostinskaya, L. N. Kurbatov, A. I. Uvarov


Abstract: A sealed tunable laser was constructed using semiconductor solutions with a composition gradient along the surface and electron guns producing wedge-shaped beams. The pulse output of a GaAsP laser reached 100 W in the spectral range 0.65–0.81 μ. The rate of tuning of the emission wavelength could be up to 1 nm/nsec.

Full text: PDF file (372 kB)

English version:
Soviet Journal of Quantum Electronics, 1977, 7:9, 1168–1169

UDC: 621.375.8:621.314.26
PACS: 42.55.Px
Received: 08.12.1976
Revised: 18.03.1977

Citation: A. N. Vlasov, G. S. Kozina, T. A. Kostinskaya, L. N. Kurbatov, A. I. Uvarov, “Continuously tunable electron-beam-pumped semiconductor laser”, Kvantovaya Elektronika, 4:9 (1977), 2038–2039 [Sov J Quantum Electron, 7:9 (1977), 1168–1169]

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