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Brief Communications Continuously tunable electron-beam-pumped semiconductor laser A. N. Vlasov, G. S. Kozina, T. A. Kostinskaya, L. N. Kurbatov, A. I. Uvarov Abstract: A sealed tunable laser was constructed using semiconductor solutions with a composition gradient along the surface and electron guns producing wedge-shaped beams. The pulse output of a GaAsP laser reached 100 W in the spectral range 0.65–0.81 μ. The rate of tuning of the emission wavelength could be up to 1 nm/nsec.  Full text:
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English version: Soviet Journal of Quantum Electronics, 1977, 7:9, 
UDC: 621.375.8:621.314.26 PACS: 42.55.Px Received: 08.12.1976 Revised: 18.03.1977 Citation: A. N. Vlasov, G. S. Kozina, T. A. Kostinskaya, L. N. Kurbatov, A. I. Uvarov, “Continuously tunable electron-beam-pumped semiconductor laser”, Kvantovaya Elektronika, 4:9 (1977), Linking options:
Citing articles on Google Scholar: Russian citations, English citations Related articles on Google Scholar: Russian articles, English articles |
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