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Kvantovaya Elektronika, 2005, Volume 35, Number 12, Pages 1163–1166 (Mi qe13044)  

Integrated optics

Integrated optical demultiplexer based on the SiO2–SiON waveguide structure

A. A. Goncharov, S. V. Kuzmin, V. V. Svetikov, K. K. Svidzinsky, V. A. Sychugov, N. V. Trusov

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: An integrated optical demultiplexer based on the SiO2–SiON waveguide structure and operating in the wavelength range of 1.5 μm is fabricated. The demultiplexer chip has a size 10×10 mm. The parameters of the optical scheme of the device are presented, the technology of its fabrication is described, and the results of measurement of working parameters are given. It is shown that the crosstalk between communication channels (K = 8) does not exceed -25 dB. The operation of the demultiplexer as a selective reflecting mirror is demonstrated. It is shown that it can be used for constructing multifrequency lasers for fibreoptic communication systems.

Full text: PDF file (132 kB)

English version:
Quantum Electronics, 2005, 35:12, 1163–1166

Bibliographic databases:

PACS: 42.79.Sz, 42.82.Et
Received: 08.09.2005

Citation: A. A. Goncharov, S. V. Kuzmin, V. V. Svetikov, K. K. Svidzinsky, V. A. Sychugov, N. V. Trusov, “Integrated optical demultiplexer based on the SiO2–SiON waveguide structure”, Kvantovaya Elektronika, 35:12 (2005), 1163–1166 [Quantum Electron., 35:12 (2005), 1163–1166]

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  • http://mi.mathnet.ru/eng/qe13044
  • http://mi.mathnet.ru/eng/qe/v35/i12/p1163

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  • Квантовая электроника Quantum Electronics
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