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Kvantovaya Elektronika, 2006, Volume 36, Number 3, Pages 222–227 (Mi qe13125)  

This article is cited in 3 scientific papers (total in 3 papers)

Lasers

Analysis of thermal conditions of high-power semiconductor lasers and their arrays

G. T. Mikayelyan

Inject Ltd., Saratov

Abstract: The results of thermophysical investigations of semiconductor lasers are reported, which underlie the formulation of the optimal requirements on the materials, design parameters, and technological assembling conditions for high-power semiconductor lasers and their one- and two-dimensional arrays with the goal of most efficient heat removal. The methods are outlined for calculating the residual post-assembling mechanical stress and determining the assemblage conditions under which the attendant stress is insignificant and its effect on the laser quality is minimal. Also the methods are given for calculating the thermal resistance for different heat sinks, including heat sinks with forced cooling, and of determining the design requirements on the heat sink arising from specific service conditions.

Full text: PDF file (159 kB)

English version:
Quantum Electronics, 2006, 36:3, 222–227

Bibliographic databases:

PACS: 42.55.Px, 42.60.Lh
Received: 06.10.2005
Revised: 27.12.2005

Citation: G. T. Mikayelyan, “Analysis of thermal conditions of high-power semiconductor lasers and their arrays”, Kvantovaya Elektronika, 36:3 (2006), 222–227 [Quantum Electron., 36:3 (2006), 222–227]

Linking options:
  • http://mi.mathnet.ru/eng/qe13125
  • http://mi.mathnet.ru/eng/qe/v36/i3/p222

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Quantum Electron., 40:8 (2010), 697–699  mathnet  crossref  adsnasa  isi  elib
    2. A. A. Marmalyuk, A. Yu. Andreev, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, Semiconductors, 48:1 (2014), 115  crossref  adsnasa  isi  elib  scopus
    3. Bogdanovich M.V., Izyneev A.A., Lantsov K.I., Lepchenkov K.V., Ryabtsev A.G., Pavlovskii V.N., Sadovskii P.I., Svitenkov I.E., Shchemelev M.A., J. Appl. Spectrosc., 85:1 (2018), 48–54  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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