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Kvantovaya Elektronika, 2006, Volume 36, Number 4, Pages 319–323 (Mi qe13143)  

This article is cited in 6 scientific papers (total in 6 papers)

Lasers and amplifiers

Luminescent and lasing characteristics of heavily doped Yb3+:KY(WO4)2 crystals

V. È. Kisel'a, A. E. Troshina, V. G. Shcherbitskiia, N. V. Kuleshova, A. A. Pavlyukb, F. Brunnerc, R. Paschottac, F. Morier-Genoudc, U. Kellerc

a International Laser Center, Belarus State Technical University, Minsk
b Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
c ETH Zurich, Physics Department, Institute of Quantum Electronics, Switzerland

Abstract: The luminescence decay times are measured taking into account reabsorption for KY(WO4)2:Yb(KYW:Yb) crystals with atomic concentrations of active ions from 0.2% to 30%. The radiative lifetime of Yb3+ ions was measured to be 233 μs. The cw output power of 1.46 and 1.62 W was achieved with the slope efficiency 52% and 47% for Yb:KYW lasers with the atomic concentration of Yb3+ ions equal to 10% and 30%, respectively. Using a semiconductor mirror with a saturable absorber (SESAM) in the passive mode-locking regime, pulses of duration 194 and 180 fs were obtained at wavelengths of 1042 and 1039 nm for crystals with Yb3+ concentrations equal to 10% and 30%, respectively, the average output power being 0.63 and 0.75 W.

Full text: PDF file (144 kB)

English version:
Quantum Electronics, 2006, 36:4, 319–323

Bibliographic databases:

PACS: 32.50.+d, 42.55.Rz, 42.60.Lh, 42.70.Hj
Received: 10.11.2005
Revised: 12.01.2006

Citation: V. È. Kisel', A. E. Troshin, V. G. Shcherbitskii, N. V. Kuleshov, A. A. Pavlyuk, F. Brunner, R. Paschotta, F. Morier-Genoud, U. Keller, “Luminescent and lasing characteristics of heavily doped Yb3+:KY(WO4)2 crystals”, Kvantovaya Elektronika, 36:4 (2006), 319–323 [Quantum Electron., 36:4 (2006), 319–323]

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    This publication is cited in the following articles:
    1. S.A. Guretskii, A.M. Luginets, I.M. Kolesova, A.V. Kravtsov, V.B. Malyutin, A.A. Ermolaev, S.A. Karpenko, Journal of Crystal Growth, 311:6 (2009), 1529  crossref  adsnasa  isi  scopus
    2. Quantum Electron., 42:4 (2012), 292–297  mathnet  crossref  adsnasa  isi  elib
    3. Ivan G. Kisialiou, Appl. Opt, 51:22 (2012), 5458  crossref  isi  scopus
    4. G.H. Kim, J Yang, A.V. Kulik, E.G. Sall, S.A. Chizhov, Laser Phys, 23:5 (2013), 055004  crossref  mathscinet  adsnasa  isi  elib  scopus
    5. G.H. Kim, J Yang, S.A. Chizhov, E.G. Sall, A.V. Kulik, Laser Phys. Lett, 10:12 (2013), 125004  crossref  adsnasa  isi  elib  scopus
    6. Yong Y.-Sh., Aravazhi Sh., Vazquez-Cordova S.A., Carvajal J.J., Diaz F., Herek J.L., Garcia-Blanco S.M., Pollnau M., Opt. Mater. Express, 7:2 (2017), 527–532  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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