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Kvantovaya Elektronika, 2006, Volume 36, Number 5, Pages 418–423 (Mi qe13230)  

This article is cited in 10 scientific papers (total in 10 papers)

Nonlinear optical phenomena

Mechanisms of a change in the refractive index of an intensely pumped Yb:YAG crystal

O. L. Antipova, D. V. Bredikhina, O. N. Eremeykina, E. V. Ivakinb, A. P. Savikina, A. V. Sukhodolovb, K. A. Fedorovaa

a Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk

Abstract: Mechanisms of a change in the refractive index appearing in an intensely diode-pumped Yb:YAG-laser disk element are studied with the help of polarisation interferometry and dynamic grating testing. It is found that changes in the electronic component of the refractive index arising upon changing the populations of electronic levels of Yb3+ ions (the ground 2F7/2 state and the upper 2F5/2 level of the laser transition) and caused by the difference in the polarisability of these levels are an order of magnitude greater than thermal changes in the refractive index. It is shown that the difference Δp in the polarisability at the probe wavelength of 633 nm is 1.9 × 10-26 cm3 and at the laser transition wavelength of 1029 nm is 1.6 × 10-26 cm3.

Full text: PDF file (173 kB)

English version:
Quantum Electronics, 2006, 36:5, 418–423

Bibliographic databases:

PACS: 42.70Hj, 42.55Rz, 42.25Gy
Received: 02.03.2006

Citation: O. L. Antipov, D. V. Bredikhin, O. N. Eremeykin, E. V. Ivakin, A. P. Savikin, A. V. Sukhodolov, K. A. Fedorova, “Mechanisms of a change in the refractive index of an intensely pumped Yb:YAG crystal”, Kvantovaya Elektronika, 36:5 (2006), 418–423 [Quantum Electron., 36:5 (2006), 418–423]

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    1. Aldo Antognini, Karsten Schuhmann, Fernando D. Amaro, FranÇois Biraben, Andreas Dax, Adolf Giesen, Thomas Graf, Theodor W. Hansch, Paul Indelicato, Lucile Julien, IEEE J Quantum Electron, 45:8 (2009), 993  crossref  adsnasa  isi  scopus
    2. V. V. Gainov, R. I. Shaidullin, O. A. Ryabushkin, Instrum Exp Tech, 53:6 (2010), 853  crossref  isi  elib  scopus
    3. Quantum Electron., 40:3 (2010), 199–202  mathnet  crossref  adsnasa  isi  elib
    4. Quantum Electron., 41:2 (2011), 103–109  mathnet  crossref  adsnasa  isi  elib
    5. Quantum Electron., 41:9 (2011), 809–814  mathnet  crossref  adsnasa  isi  elib
    6. Ivan G. Kisialiou, Appl. Opt, 51:22 (2012), 5458  crossref  isi  scopus
    7. Quantum Electron., 43:1 (2013), 37–46  mathnet  crossref  adsnasa  isi  elib
    8. Gainov V., Ryabushkin O., Vyatkin M., Opt. Lett., 40:23 (2015), 5494–5497  crossref  adsnasa  isi  scopus
    9. Quantum Electron., 47:7 (2017), 620–626  mathnet  crossref  isi  elib
    10. Quantum Electron., 49:11 (2019), 989–1007  mathnet  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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