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Kvantovaya Elektronika, 2007, Volume 37, Number 1, Pages 69–73 (Mi qe13316)  

Lasers

On increasing the efficiency of a streamer semiconductor laser

K. I. Rusakova, V. V. Parashchukb

a Brest State Technical University
b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk

Abstract: The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu:CaGa2S4 and Eu:Ca4Ga2S7 materials.

Full text: PDF file (115 kB)

English version:
Quantum Electronics, 2007, 37:1, 69–73

Bibliographic databases:

PACS: 42.55.Px, 42.60.Lh
Received: 29.06.2006

Citation: K. I. Rusakov, V. V. Parashchuk, “On increasing the efficiency of a streamer semiconductor laser”, Kvantovaya Elektronika, 37:1 (2007), 69–73 [Quantum Electron., 37:1 (2007), 69–73]

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  • http://mi.mathnet.ru/eng/qe13316
  • http://mi.mathnet.ru/eng/qe/v37/i1/p69

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