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Kvantovaya Elektronika, 2009, Volume 39, Number 3, Pages 241–243 (Mi qe13979)  

This article is cited in 10 scientific papers (total in 10 papers)


Laser diodes emitting up to 25 W at 808 nm

V. V. Bezotosnyia, V. Yu. Bondareva, O. N. Krokhina, G. T. Mikayelyanb, V. A. Oleshchenkoa, V. F. Pevtsova, Yu. M. Popova, E. A. Chesheva

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Inject Ltd., Saratov

Abstract: Crystals of high-power laser diodes are directly mounted on copper heat-removing elements. The maximum output power of 25 W is obtained many times in a 808-nm cw laser with the 150-μm-wide strip contact at 20 °C. After training tests at the output power of 6 W for 200 hours, the yield of acceptable samples was 80 %. No changes in the output parameters were observed after tests for 70 hours at the output power of 8.5 W. Tests are being continued.

Full text: PDF file (185 kB)

English version:
Quantum Electronics, 2009, 39:3, 241–243

Bibliographic databases:

PACS: 42.55.Px, 42.60.Jf, 42.60.Lh
Received: 15.10.2008
Revised: 12.12.2008

Citation: V. V. Bezotosnyi, V. Yu. Bondarev, O. N. Krokhin, G. T. Mikayelyan, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Laser diodes emitting up to 25 W at 808 nm”, Kvantovaya Elektronika, 39:3 (2009), 241–243 [Quantum Electron., 39:3 (2009), 241–243]

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    1. L. J. Wang, Y. Yang, Y. G. Zeng, L. J. Wang, C. Z. Tong, X. N. Shan, H. X. Zhao, R. Wang, S. F. Yoon, Appl. Phys. B, 107:3 (2012), 809  crossref  adsnasa  isi  elib  scopus
    2. Popov Yu.M., Semicond. Sci. Technol., 27:9, SI (2012), 090203  crossref  adsnasa  isi  elib  scopus
    3. Wang L., Tong C., Zeng Yu., Tian S., Xing E., Yang Y., Wang L., 2012 Asia Communications and Photonics Conference (Acp), Asia Communications and Photonics Conference and Exhibition, IEEE, 2012  isi
    4. Wang Lijun, Tong Cunzhu, Peng Hangyu, Zhang Jun, 2nd International Symposium on Laser Interaction with Matter (Limis 2012), Proceedings of SPIE, 8796, eds. Kaierle S., Liu J., Cao J., SPIE-Int Soc Optical Engineering, 2013  crossref  isi  scopus
    5. V. V. Bezotosnyi, V. Yu. Bondarev, O. N. Krokhin, V. A. Oleshenko, V. F. Pevtsov, Semiconductors, 48:1 (2014), 109  crossref  adsnasa  isi  elib  scopus
    6. A. A. Marmalyuk, A. Yu. Andreev, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, Semiconductors, 48:1 (2014), 115  crossref  adsnasa  isi  elib  scopus
    7. Lu Z., Wang L., Zhao Zh., Shu Sh., Hou G., Lu H., Tian S., Tong C., Wang L., Chin. Opt. Lett., 15:8 (2017), 081402  crossref  isi  scopus
    8. Balashov V.V. Bezotosnyi V.V. Cheshev E.A. Gordeev V.P. Kanaev A.Yu. Kopylov Yu.L. Koromyslov A.L. Lopukhin K.V. Polevov K.A. Tupitsyn I.M., J. Russ. Laser Res., 40:3 (2019), 237–242  crossref  isi  scopus
    9. Quantum Electron., 50:2 (2020), 104–108  mathnet  crossref  isi  elib
    10. Oleshchenko V.A., Kharin A.Yu., Alykova A.F., Karpukhina O.V., Karpov N.V., Popov A.A., Bezotosnyi V.V., Klimentov S.M., Zavestovskaya I.N., Kabashin A.V., Timoshenko V.Yu., Appl. Surf. Sci., 516 (2020), 145661  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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